Part Details for SI7115DN-T1-E3 by Vishay Siliconix
Overview of SI7115DN-T1-E3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI7115DN-T1-E3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI7115DN-T1-E3CT-ND
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DigiKey | MOSFET P-CH 150V 8.9A PPAK1212-8 Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
12016 In Stock |
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$0.8375 / $2.0000 | Buy Now |
Part Details for SI7115DN-T1-E3
SI7115DN-T1-E3 CAD Models
SI7115DN-T1-E3 Part Data Attributes:
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SI7115DN-T1-E3
Vishay Siliconix
Buy Now
Datasheet
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SI7115DN-T1-E3
Vishay Siliconix
Trans MOSFET P-CH 150V 2.3A 8-Pin PowerPAK 1212 T/R
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY SILICONIX | |
Package Description | SMALL OUTLINE, S-XDSO-C5 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 11.25 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 150 V | |
Drain Current-Max (ID) | 2.3 A | |
Drain-source On Resistance-Max | 0.295 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-XDSO-C5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 52 W | |
Pulsed Drain Current-Max (IDM) | 15 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |