There are no models available for this part yet.
Overview of SI9926BDY-T1-E3 by Vishay Intertechnologies
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 6 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Industrial Automation
Robotics and Drones
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
FIDO5100BBCZ | Analog Devices | REM Switch | |
FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SI9926BDY-T1-E3 by Vishay Intertechnologies
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
SI9926BDY-T1-E3
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 20V 6.2A 8-Pin SOIC T/R - Tape and Reel (Alt: SI9926BDY-T1-E3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
|
RFQ | ||
Bristol Electronics | 3504 |
|
RFQ | ||||
Bristol Electronics | 2132 |
|
RFQ | ||||
Quest Components | 6200 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 2803 |
|
$0.9563 / $2.5500 | Buy Now | ||
Quest Components | 6200 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 1778 |
|
$0.8050 / $2.3000 | Buy Now | ||
Quest Components | 6200 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 1208 |
|
$0.6500 / $2.5000 | Buy Now |
CAD Models for SI9926BDY-T1-E3 by Vishay Intertechnologies
Part Data Attributes for SI9926BDY-T1-E3 by Vishay Intertechnologies
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
VISHAY INTERTECHNOLOGY INC
|
Package Description
|
SOP-8
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Samacsys Manufacturer
|
Vishay
|
Configuration
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
20 V
|
Drain Current-Max (ID)
|
6.2 A
|
Drain-source On Resistance-Max
|
0.02 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
R-PDSO-G8
|
JESD-609 Code
|
e3
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
2
|
Number of Terminals
|
8
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Operating Temperature-Min
|
-55 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
260
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
1.14 W
|
Pulsed Drain Current-Max (IDM)
|
30 A
|
Reference Standard
|
IEC-61249-2-21
|
Surface Mount
|
YES
|
Terminal Finish
|
MATTE TIN
|
Terminal Form
|
GULL WING
|
Terminal Position
|
DUAL
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
Transistor Element Material
|
SILICON
|
Turn-off Time-Max (toff)
|
75 ns
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Turn-on Time-Max (ton)
|
130 ns
|
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