SI9926BDY-T1-E3
Description: Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

Overview of SI9926BDY-T1-E3 by Vishay Intertechnologies

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 6 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Industrial Automation Robotics and Drones

Available Datasheets

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Price & Stock for SI9926BDY-T1-E3 by Vishay Intertechnologies

Part # Manufacturer Description Stock Price Buy
DISTI # SI9926BDY-T1-E3
Avnet Americas Transistor MOSFET Array Dual N-CH 20V 6.2A 8-Pin SOIC T/R - Tape and Reel (Alt: SI9926BDY-T1-E3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
RFQ
Bristol Electronics   3504
RFQ
Bristol Electronics   2132
RFQ
Quest Components 6200 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 2803
  • 1 $2.5500
  • 510 $1.0519
  • 952 $0.9563
$0.9563 / $2.5500 Buy Now
Quest Components 6200 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 1778
  • 1 $2.3000
  • 175 $0.9200
  • 871 $0.8050
$0.8050 / $2.3000 Buy Now
Quest Components 6200 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 1208
  • 1 $2.5000
  • 49 $0.7500
  • 268 $0.6500
$0.6500 / $2.5000 Buy Now

CAD Models for SI9926BDY-T1-E3 by Vishay Intertechnologies
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Part Data Attributes for SI9926BDY-T1-E3 by Vishay Intertechnologies

SI9926BDY-T1-E3
Vishay Intertechnologies
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
SOP-8
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
Drain Current-Max (ID)
6.2 A
Drain-source On Resistance-Max
0.02 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
2
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
1.14 W
Pulsed Drain Current-Max (IDM)
30 A
Reference Standard
IEC-61249-2-21
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
75 ns
Turn-on Time-Max (ton)
130 ns
Want to compare parts?
  1. SI9926BDY-T1-E3
    Vishay Intertechnologies
    Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
    VS

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