| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| FIDO5100BBCZ | Analog Devices | REM Switch | |
| FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
| ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
SIA447DJ-T1-GE3CT-ND
|
DigiKey | MOSFET P-CH 12V 12A PPAK SC70-6 Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
69013 In Stock |
|
$0.1316 / $0.3300 | Buy Now |
|
|
|
|---|---|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
VISHAY SILICONIX
|
|
Package Description
|
SMALL OUTLINE, S-PDSO-N3
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8541.29.00.95
|
|
Samacsys Manufacturer
|
Vishay
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
12 V
|
|
Drain Current-Max (ID)
|
12 A
|
|
Drain-source On Resistance-Max
|
0.0135 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
Feedback Cap-Max (Crss)
|
585 pF
|
|
JESD-30 Code
|
S-PDSO-N3
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Operating Temperature-Min
|
-55 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
SQUARE
|
|
Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
P-CHANNEL
|
|
Power Dissipation Ambient-Max
|
3.5 W
|
|
Power Dissipation-Max (Abs)
|
19 W
|
|
Pulsed Drain Current-Max (IDM)
|
50 A
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
Matte Tin (Sn) - annealed
|
|
Terminal Form
|
NO LEAD
|
|
Terminal Position
|
DUAL
|
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
|
Turn-off Time-Max (toff)
|
170 ns
|
|
Turn-on Time-Max (ton)
|
120 ns
|
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIA447DJ-T1-GE3 | Power Field-Effect Transistor, 12A I(D), 12V, 0.0135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN | Vishay Intertechnologies | SIA447DJ-T1-GE3 vs SIA447DJ-T1-GE3 |
