Part Details for SIA814DJ-T1-GE3 by Vishay Intertechnologies
Overview of SIA814DJ-T1-GE3 by Vishay Intertechnologies
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SIA814DJ-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1118 |
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RFQ | ||
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Chip1Cloud | MOSFET N-CH 30V 4.5A SC70-6 | 1317 |
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RFQ | |
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Perfect Parts Corporation | 6999 |
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RFQ | ||
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Sense Electronic Company Limited | QFN | 1088 |
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RFQ |
Part Details for SIA814DJ-T1-GE3
SIA814DJ-T1-GE3 CAD Models
SIA814DJ-T1-GE3 Part Data Attributes
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SIA814DJ-T1-GE3
Vishay Intertechnologies
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Datasheet
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SIA814DJ-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SC-70, 6 PIN | |
Reach Compliance Code | unknown | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 4.5 A | |
Drain-source On Resistance-Max | 0.061 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-XDSO-N6 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 6.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |