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Part Details for SIA910EDJ-T1-GE3 by Vishay Intertechnologies
Overview of SIA910EDJ-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (22 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SIA910EDJ-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
97W2599
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Newark | Dual Mosfet, Dual N Channel, 4.5 A, 12 V, 0.023 Ohm, 4.5 V, 400 Mv Rohs Compliant: Yes |Vishay SIA910EDJ-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 56992 |
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$0.1720 | Buy Now |
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DISTI #
05W6927
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Newark | Mosfet, Dual N Channel, 12V, 4.5A, Powerpak Sc70-6, Channel Type:N Channel, Drain Source Voltage Vds N Channel:12V, Drain Source Voltage Vds P Channel:12V, Continuous Drain Current Id N Channel:4.5A, No. Of Pins:6Pins Rohs Compliant: Yes |Vishay SIA910EDJ-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.3370 | Buy Now |
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DISTI #
86R3789
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Newark | Mosfet, Dual N Ch, 12V, 4.5A, Powerpak Sc70-6, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds N Channel:12V, Drain Source Voltage Vds P Channel:12V, Continuous Drain Current Id N Channel:4.5A, No. Of Pins:6Pins Rohs Compliant: Yes |Vishay SIA910EDJ-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.2470 | Buy Now |
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DISTI #
SIA910EDJ-T1-GE3
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Avnet Americas | Transistor MOSFET Array Dual N-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA910EDJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.2025 / $0.2572 | Buy Now |
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DISTI #
SIA910EDJ-T1-GE3
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Avnet Americas | Transistor MOSFET Array Dual N-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA910EDJ-T1-GE3) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Reel | 0 |
|
$0.2025 / $0.2505 | Buy Now |
|
DISTI #
97W2599
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R - Bulk (Alt: 97W2599) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 1 Days Container: Bulk | 0 |
|
$0.4140 / $0.6360 | Buy Now |
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DISTI #
781-SIA910EDJ-T1-GE3
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Mouser Electronics | MOSFET 12V Vds 8V Vgs PowerPAK SC-70 RoHS: Compliant | 173347 |
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$0.1890 / $0.5400 | Buy Now |
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DISTI #
V72:2272_09216853
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Arrow Electronics | Trans MOSFET N-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2308 Container: Cut Strips | Americas - 2621 |
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$0.1924 / $0.3191 | Buy Now |
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Future Electronics | Dual N-Channel 12 V 28 mOhm SMT TrenchFET Power Mosfet - PowerPAK SC-70-6L RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.1830 / $0.1960 | Buy Now |
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Future Electronics | Dual N-Channel 12 V 28 mOhm SMT TrenchFET Power Mosfet - PowerPAK SC-70-6L RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.1830 / $0.1960 | Buy Now |
Part Details for SIA910EDJ-T1-GE3
SIA910EDJ-T1-GE3 CAD Models
SIA910EDJ-T1-GE3 Part Data Attributes:
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SIA910EDJ-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIA910EDJ-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 4.5A I(D), 12V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, LEADLESS, POWERPAK-6
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, SC-70, LEADLESS, POWERPAK-6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks, 1 Day | |
| Samacsys Manufacturer | Vishay | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 12 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 0.028 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N6 | |
| JESD-609 Code | e3 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 7.8 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |