Part Details for SIHB28N60EF-GE3 by Vishay Intertechnologies
Overview of SIHB28N60EF-GE3 by Vishay Intertechnologies
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for SIHB28N60EF-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHB28N60EF-GE3
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Avnet Americas | Trans MOSFET N-CH 600V 28A 3-Pin D2PAK T/R - Tape and Reel (Alt: SIHB28N60EF-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
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$3.0105 / $3.8245 | Buy Now |
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DISTI #
78-SIHB28N60EF-GE3
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Mouser Electronics | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant | 950 |
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$2.8800 / $5.9700 | Buy Now |
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Future Electronics | 600V, 28A, 0.123 OHM, D2PAK EF SERIES RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$2.9800 / $3.2500 | Buy Now |
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Future Electronics | 600V, 28A, 0.123 OHM, D2PAK EF SERIES RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$2.9800 / $3.2500 | Buy Now |
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DISTI #
SIHB28N60EF-GE3
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TTI | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 1000 In Stock |
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$2.8500 / $4.1100 | Buy Now |
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DISTI #
SIHB28N60EF-GE3
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Avnet Americas | Trans MOSFET N-CH 600V 28A 3-Pin D2PAK T/R - Tape and Reel (Alt: SIHB28N60EF-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
|
$3.0105 / $3.8245 | Buy Now |
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DISTI #
SIHB28N60EF-GE3
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TME | Transistor: N-MOSFET, unipolar, 600V, 18A, Idm: 75A, 250W Min Qty: 1 | 0 |
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$3.7200 / $5.5700 | RFQ |
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DISTI #
SIHB28N60EF-GE3
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Avnet Americas | Trans MOSFET N-CH 600V 28A 3-Pin D2PAK T/R - Tape and Reel (Alt: SIHB28N60EF-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
|
$3.0105 / $3.8245 | Buy Now |
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DISTI #
SIHB28N60EF-GE3
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EBV Elektronik | Trans MOSFET N-CH 600V 28A 3-Pin D2PAK T/R (Alt: SIHB28N60EF-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 2 Weeks, 0 Days | EBV - 850 |
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Buy Now |
Part Details for SIHB28N60EF-GE3
SIHB28N60EF-GE3 CAD Models
SIHB28N60EF-GE3 Part Data Attributes
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SIHB28N60EF-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHB28N60EF-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 28A I(D), 600V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 691 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 28 A | |
| Drain-source On Resistance-Max | 0.123 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 6 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Pulsed Drain Current-Max (IDM) | 75 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 201 ns | |
| Turn-on Time-Max (ton) | 128 ns |
Alternate Parts for SIHB28N60EF-GE3
This table gives cross-reference parts and alternative options found for SIHB28N60EF-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHB28N60EF-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIHB30N60E-E3 | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | Vishay Intertechnologies | SIHB28N60EF-GE3 vs SIHB30N60E-E3 |
| IPW60R125C6FKSA1 | Power Field-Effect Transistor, 30A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | SIHB28N60EF-GE3 vs IPW60R125C6FKSA1 |
| FMP30N60S1FD | Power Field-Effect Transistor | Fuji Electric Co Ltd | SIHB28N60EF-GE3 vs FMP30N60S1FD |
| SIHP28N60EF-GE3 | Power Field-Effect Transistor, 28A I(D), 600V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SIHB28N60EF-GE3 vs SIHP28N60EF-GE3 |
| IPP60R125C6XKSA1 | Power Field-Effect Transistor, 30A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SIHB28N60EF-GE3 vs IPP60R125C6XKSA1 |
| SIHB30N60E-GE3 | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2 | Vishay Intertechnologies | SIHB28N60EF-GE3 vs SIHB30N60E-GE3 |
| IPW60R125C6 | Power Field-Effect Transistor, 30A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | SIHB28N60EF-GE3 vs IPW60R125C6 |
| SIHG28N65EF-GE3 | Power Field-Effect Transistor, 28A I(D), 650V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SIHB28N60EF-GE3 vs SIHG28N65EF-GE3 |
| SIHW30N60E-GE3 | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, | Vishay Intertechnologies | SIHB28N60EF-GE3 vs SIHW30N60E-GE3 |