Part Details for SIHP22N60EL-GE3 by Vishay Intertechnologies
Overview of SIHP22N60EL-GE3 by Vishay Intertechnologies
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SIHP22N60EL-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78-SIHP22N60EL-GE3
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Mouser Electronics | MOSFETs 600V Vds 30V Vgs TO-220AB RoHS: Compliant | 0 |
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$2.0100 / $2.0600 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 21 Weeks | 0 |
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$1.9700 | Buy Now |
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DISTI #
SIHP22N60EL-GE3
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TTI | MOSFETs 600V Vds 30V Vgs TO-220AB RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 1000 Container: Reel | Americas - 0 |
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$2.0400 | Buy Now |
Part Details for SIHP22N60EL-GE3
SIHP22N60EL-GE3 CAD Models
SIHP22N60EL-GE3 Part Data Attributes
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SIHP22N60EL-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHP22N60EL-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 21A I(D), 600V, 0.197ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 286 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 21 A | |
| Drain-source On Resistance-Max | 0.197 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 45 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHP22N60EL-GE3
This table gives cross-reference parts and alternative options found for SIHP22N60EL-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHP22N60EL-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STW28N65M2 | N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package | STMicroelectronics | SIHP22N60EL-GE3 vs STW28N65M2 |
| SIHP22N60E-E3 | TRANSISTOR 21 A, 600 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | Vishay Siliconix | SIHP22N60EL-GE3 vs SIHP22N60E-E3 |
| SIHB180N60E-GE3 | Power Field-Effect Transistor, | Vishay Intertechnologies | SIHP22N60EL-GE3 vs SIHB180N60E-GE3 |
| IPP60R190C6XKSA1 | Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SIHP22N60EL-GE3 vs IPP60R190C6XKSA1 |
| Q67040-S4550 | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Infineon Technologies AG | SIHP22N60EL-GE3 vs Q67040-S4550 |
| STI23NM60ND | 19.5A, 600V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN | STMicroelectronics | SIHP22N60EL-GE3 vs STI23NM60ND |
| SPW24N60CFDFKSA1 | Power Field-Effect Transistor, 21.7A I(D), 600V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | Infineon Technologies AG | SIHP22N60EL-GE3 vs SPW24N60CFDFKSA1 |
| SPP20N60C3XKSA1 | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SIHP22N60EL-GE3 vs SPP20N60C3XKSA1 |
| APT20N60BCF | Power Field-Effect Transistor, 20A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | Microsemi Corporation | SIHP22N60EL-GE3 vs APT20N60BCF |
| SIHP22N60E-E3 | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SIHP22N60EL-GE3 vs SIHP22N60E-E3 |