Part Details for SIHS36N50D-GE3 by Vishay Intertechnologies
Overview of SIHS36N50D-GE3 by Vishay Intertechnologies
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for SIHS36N50D-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
25AJ2826
|
Newark | Mosfet, N-Ch, 500V, 36A, Super-247 Rohs Compliant: Yes |Vishay SIHS36N50D-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1511 |
|
$4.7100 / $6.6000 | Buy Now |
|
DISTI #
SIHS36N50D-GE3
|
Avnet Americas | Transistor MOSFET N-CH 500V 36A 3-Pin Super-247 (Alt: SIHS36N50D-GE3) RoHS: Not Compliant Min Qty: 480 Package Multiple: 480 Lead time: 12 Weeks, 0 Days | 0 |
|
$4.7876 | Buy Now |
|
DISTI #
78-SIHS36N50D-GE3
|
Mouser Electronics | MOSFET 500V N-CHANNEL RoHS: Compliant | 3385 |
|
$3.5900 / $6.3500 | Buy Now |
|
|
Future Electronics | D Series Power N-Channel Mosfet 550V 36A Super-247Package PB & halogen free RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 30 Container: Tube | 0Tube |
|
$4.3100 / $5.0400 | Buy Now |
|
DISTI #
SIHS36N50D-GE3
|
TTI | MOSFET 500V N-CHANNEL RoHS: Compliant pbFree: Pb-Free Min Qty: 480 Package Multiple: 20 Container: Tube | Americas - 0 |
|
$3.3000 | Buy Now |
|
DISTI #
SIHS36N50D-GE3
|
Avnet Americas | Transistor MOSFET N-CH 500V 36A 3-Pin Super-247 (Alt: SIHS36N50D-GE3) RoHS: Not Compliant Min Qty: 480 Package Multiple: 480 Lead time: 12 Weeks, 0 Days | 0 |
|
$4.7876 | Buy Now |
|
DISTI #
SIHS36N50D-GE3
|
TME | Transistor: N-MOSFET, unipolar, 500V, 23A, Idm: 112A, 446W, SUPER247 Min Qty: 1 | 0 |
|
$5.2000 / $7.7800 | RFQ |
|
DISTI #
SIHS36N50D-GE3
|
EBV Elektronik | Transistor MOSFET N-CH 500V 36A 3-Pin Super-247 (Alt: SIHS36N50D-GE3) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 1 Weeks, 6 Days | EBV - 600 |
|
Buy Now | |
|
DISTI #
3650271
|
element14 Asia-Pacific | MOSFET, N-CH, 500V, 36A, SUPER-247 RoHS: Compliant Min Qty: 1 Container: Each | 1511 |
|
$3.7863 / $6.7016 | Buy Now |
|
DISTI #
3650271
|
Farnell | MOSFET, N-CH, 500V, 36A, SUPER-247 RoHS: Compliant Min Qty: 1 Lead time: 40 Weeks, 1 Days Container: Each | 1511 |
|
$4.3839 / $6.9892 | Buy Now |
Part Details for SIHS36N50D-GE3
SIHS36N50D-GE3 CAD Models
SIHS36N50D-GE3 Part Data Attributes:
|
|
SIHS36N50D-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SIHS36N50D-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 36A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-274AA,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 332 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 36 A | |
| Drain-source On Resistance-Max | 0.13 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 25 pF | |
| JEDEC-95 Code | TO-274AA | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 446 W | |
| Pulsed Drain Current-Max (IDM) | 112 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 221 ns | |
| Turn-on Time-Max (ton) | 200 ns |