SMPJ310
InterFET Corporation
Description: RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-236

Overview of SMPJ310 by InterFET Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 1 listing )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Available )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SMPJ310 by InterFET Corporation

Part # Manufacturer Description Stock Price Buy
DISTI # 106-SMPJ310
Mouser Electronics JFETs JFET N-Channel -25V Low Noise RoHS: Compliant 447
  • 1 $2.9400
  • 10 $2.4400
  • 100 $1.9400
  • 250 $1.7900
  • 500 $1.6300
  • 1,000 $1.3900
  • 2,500 $1.3200
  • 5,000 $1.2700
$1.2700 / $2.9400 Buy Now

CAD Models for SMPJ310 by InterFET Corporation
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Part Data Attributes for SMPJ310 by InterFET Corporation

SMPJ310
InterFET Corporation
-
-
Part Life Cycle Code
Contact Manufacturer
Ihs Manufacturer
INTER F E T CORP
Package Description
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
InterFET
Configuration
SINGLE
FET Technology
JUNCTION
Feedback Cap-Max (Crss)
3.5 pF
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
JEDEC-95 Code
TO-236
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Number of Terminals
3
Operating Mode
DEPLETION MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Want to compare parts?
  1. SMPJ310
    InterFET Corporation
    RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-236
    VS

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