Part Details for SPB20N60C3ATMA1 by Infineon Technologies AG
Overview of SPB20N60C3ATMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SPB20N60C3ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
79AH6721
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Newark | High Power_Legacy Rohs Compliant: Yes |Infineon SPB20N60C3ATMA1 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel | 1000 |
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$2.3000 / $2.8100 | Buy Now |
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DISTI #
98K0554
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Newark | N Channel Mosfet, 650V, 20.7A, P-To-263, Channel Type:N Channel, Drain Source Voltage Vds:650V, Continuous Drain Current Id:20.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon SPB20N60C3ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 6561 |
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$3.4300 / $5.6900 | Buy Now |
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DISTI #
86AK6351
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Newark | Mosfet, N-Ch, 650V, 20.7A, To-263 Rohs Compliant: Yes |Infineon SPB20N60C3ATMA1 Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$2.7700 / $2.8600 | Buy Now |
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DISTI #
SPB20N60C3ATMA1CT-ND
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DigiKey | MOSFET N-CH 600V 20.7A TO263-3 Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
4591 In Stock |
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$2.6634 / $5.4700 | Buy Now |
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DISTI #
SPB20N60C3ATMA1
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Avnet Americas | Trans MOSFET N-CH 650V 20.7A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SPB20N60C3ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Reel | 1000 |
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$2.2990 / $2.8100 | Buy Now |
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Future Electronics | Single N-Channel 650 V 190 mOhm 87 nC CoolMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
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$2.6200 | Buy Now |
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Future Electronics | Single N-Channel 650 V 190 mOhm 87 nC CoolMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
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$2.6200 | Buy Now |
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DISTI #
SPB20N60C3ATMA1
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Avnet Americas | Trans MOSFET N-CH 650V 20.7A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SPB20N60C3ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Reel | 1000 |
|
$2.2990 / $2.8100 | Buy Now |
|
DISTI #
SPB20N60C3ATMA1
|
Avnet Americas | Trans MOSFET N-CH 650V 20.7A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SPB20N60C3ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
|
$2.2990 / $2.8100 | Buy Now |
|
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Ameya Holding Limited | Single N-Channel 650 V 190 mOhm 87 nC CoolMOS™ Power Mosfet - D2PAK | 579 |
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RFQ |
Part Details for SPB20N60C3ATMA1
SPB20N60C3ATMA1 CAD Models
SPB20N60C3ATMA1 Part Data Attributes
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SPB20N60C3ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPB20N60C3ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 690 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 20.7 A | |
| Drain-source On Resistance-Max | 0.19 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 62.1 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for SPB20N60C3ATMA1
This table gives cross-reference parts and alternative options found for SPB20N60C3ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPB20N60C3ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPP60R190C6XKSA1 | Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPB20N60C3ATMA1 vs IPP60R190C6XKSA1 |
| SIHP21N65EF-GE3 | Power Field-Effect Transistor, 21A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SPB20N60C3ATMA1 vs SIHP21N65EF-GE3 |
| SIHG22N60EL-GE3 | Power Field-Effect Transistor, 21A I(D), 600V, 0.197ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SPB20N60C3ATMA1 vs SIHG22N60EL-GE3 |
| SSF20NS60 | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Suzhou Good-Ark Electronics Co Ltd | SPB20N60C3ATMA1 vs SSF20NS60 |
| STI20NM65N | 19A, 650V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STMicroelectronics | SPB20N60C3ATMA1 vs STI20NM65N |
| SPI20N60C3XKSA1 | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Infineon Technologies AG | SPB20N60C3ATMA1 vs SPI20N60C3XKSA1 |
| SIHP22N60E-E3 | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SPB20N60C3ATMA1 vs SIHP22N60E-E3 |
| R6520KNZ4C13 | Power Field-Effect Transistor, | ROHM Semiconductor | SPB20N60C3ATMA1 vs R6520KNZ4C13 |
| SIHB22N65E-GE3 | Power Field-Effect Transistor, 22A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | Vishay Intertechnologies | SPB20N60C3ATMA1 vs SIHB22N65E-GE3 |
| IPW60R190C6XK | Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | SPB20N60C3ATMA1 vs IPW60R190C6XK |