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Small Signal Field-Effect Transistor, 8A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
20AC4103
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Newark | P-Channel 12-V (D-S) 175C Mosfet |Vishay SQ3461EV-T1_GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2690 / $0.3580 | Buy Now |
DISTI #
75AH9251
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Newark | Mosfet, P-Ch, 12V, 8A, 175Deg C, 5W Rohs Compliant: Yes |Vishay SQ3461EV-T1_GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
|
$0.5120 / $0.8200 | Buy Now |
DISTI #
SQ3461EV-T1_GE3
|
Avnet Americas | Trans MOSFET P-CH 12V 8A 6-Pin TSOP T/R - Tape and Reel (Alt: SQ3461EV-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
|
$0.3091 | Buy Now |
DISTI #
78-SQ3461EV-T1_GE3
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Mouser Electronics | MOSFETs P Ch -12Vds 8Vgs AEC-Q101 Qualified RoHS: Compliant | 13616 |
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$0.2540 / $0.7700 | Buy Now |
|
Future Electronics | P-CHANNEL 12-V (D-S) 175C MOSFET RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks | 0 |
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$0.2680 | Buy Now |
DISTI #
SQ3461EV-T1-GE3
|
TME | Transistor: P-MOSFET, unipolar, -12V, -6.6A, 1.67W, TSOP6 Min Qty: 1 | 0 |
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$0.3800 / $0.9500 | RFQ |
DISTI #
SQ3461EV-T1_GE3
|
Avnet Asia | Trans MOSFET P-CH 12V 8A 6-Pin TSOP T/R (Alt: SQ3461EV-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days | 3000 |
|
RFQ |
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SQ3461EV-T1_GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SQ3461EV-T1_GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 8A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 15 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 14 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 12 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.025 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 620 pF | |
JEDEC-95 Code | MO-193AA | |
JESD-30 Code | R-PDSO-G6 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 5 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 213 ns | |
Turn-on Time-Max (ton) | 85 ns |