SQ4850EY-T1_BE3
Description: Small Signal Field-Effect Transistor,

Overview of SQ4850EY-T1_BE3 by Vishay Intertechnologies

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Available Datasheets

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Price & Stock for SQ4850EY-T1_BE3 by Vishay Intertechnologies

Part # Manufacturer Description Stock Price Buy
DISTI # 80AH8979
Newark Mosfet, N-Ch, 60V, 12A, Soic, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:12A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, No. Of Pins:8Pinsrohs Compliant: Yes |Vishay SQ4850EY-T1_BE3 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # 78AH6716
Newark Mosfet, N-Ch, 60V, 12A, Soic, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:12A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, No. Of Pins:8Pinsrohs Compliant: Yes |Vishay SQ4850EY-T1_BE3 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now

CAD Models for SQ4850EY-T1_BE3 by Vishay Intertechnologies
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Part Data Attributes for SQ4850EY-T1_BE3 by Vishay Intertechnologies

SQ4850EY-T1_BE3
Vishay Intertechnologies
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
,
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Avalanche Energy Rating (Eas)
26 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
12 A
Drain-source On Resistance-Max
0.022 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
95 pF
JESD-30 Code
R-PDSO-G8
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
48 A
Reference Standard
AEC-Q101
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
49 ns
Turn-on Time-Max (ton)
25 ns
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  1. SQ4850EY-T1_BE3
    Vishay Intertechnologies
    Small Signal Field-Effect Transistor,
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Alternate Parts for SQ4850EY-T1_BE3

This table gives cross-reference parts and alternative options found for SQ4850EY-T1_BE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SQ4850EY-T1_BE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
SQ4850EY-T1_GE3 Small Signal Field-Effect Transistor, 6A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Vishay Intertechnologies SQ4850EY-T1_BE3 vs SQ4850EY-T1_GE3
Part Number Description Manufacturer Compare
SQ4850EY-T1_GE3 Small Signal Field-Effect Transistor, 6A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Vishay Intertechnologies SQ4850EY-T1_BE3 vs SQ4850EY-T1_GE3

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