Part Details for SQM100N04-2M7_GE3 by Vishay Intertechnologies
Overview of SQM100N04-2M7_GE3 by Vishay Intertechnologies
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SQM100N04-2M7_GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
SQM100N04-2M7_GE3
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Avnet Americas | Trans MOSFET N-CH 40V 100A 3-Pin TO-263 T/R - Bulk (Alt: SQM100N04-2M7_GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days Container: Bulk | 0 |
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$1.2741 / $1.6186 | Buy Now |
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DISTI #
78-SQM100N04-2M7_GE3
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Mouser Electronics | MOSFET 40V 100A 157W AEC-Q101 Qualified RoHS: Compliant | 774 |
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$1.2200 / $2.8100 | Buy Now |
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Future Electronics | N-CH 40-V TO-263 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$1.2400 / $1.3000 | Buy Now |
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DISTI #
SQM100N04-2M7_GE3
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Avnet Americas | Trans MOSFET N-CH 40V 100A 3-Pin TO-263 T/R - Bulk (Alt: SQM100N04-2M7_GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days Container: Bulk | 0 |
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$1.2741 / $1.6186 | Buy Now |
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DISTI #
SQM100N04-2M7-GE3
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TME | Transistor: N-MOSFET, unipolar, 40V, 98A, 157W, D2PAK,TO263 Min Qty: 1 | 0 |
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$1.8300 / $2.5500 | RFQ |
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DISTI #
SQM100N04-2M7_GE3
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Avnet Americas | Trans MOSFET N-CH 40V 100A 3-Pin TO-263 T/R - Bulk (Alt: SQM100N04-2M7_GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days Container: Bulk | 0 |
|
$1.2741 / $1.6186 | Buy Now |
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DISTI #
SQM100N04-2M7_GE3
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EBV Elektronik | Trans MOSFET N-CH 40V 100A 3-Pin TO-263 T/R (Alt: SQM100N04-2M7_GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 3 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SQM100N04-2M7_GE3
SQM100N04-2M7_GE3 CAD Models
SQM100N04-2M7_GE3 Part Data Attributes
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SQM100N04-2M7_GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SQM100N04-2M7_GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 100A I(D), 40V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 245 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0027 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for SQM100N04-2M7_GE3
This table gives cross-reference parts and alternative options found for SQM100N04-2M7_GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SQM100N04-2M7_GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SQM110N04-03-GE3 | TRANSISTOR 110 A, 40 V, 0.0028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power | Vishay Siliconix | SQM100N04-2M7_GE3 vs SQM110N04-03-GE3 |
| SQM47N10-24L-GE3 | Power Field-Effect Transistor, 47A I(D), 100V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN | Vishay Intertechnologies | SQM100N04-2M7_GE3 vs SQM47N10-24L-GE3 |
| SQM110N04-03-GE3 | Power Field-Effect Transistor, 110A I(D), 40V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | SQM100N04-2M7_GE3 vs SQM110N04-03-GE3 |