Part Details for SSM3K333R,LF(B by Toshiba America Electronic Components
Overview of SSM3K333R,LF(B by Toshiba America Electronic Components
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
Price & Stock for SSM3K333R,LF(B
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
68016869
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Verical | Trans MOSFET N-CH Si 30V 6A 3-Pin SOT-23F T/R RoHS: Compliant Min Qty: 603 Package Multiple: 1 Date Code: 2301 | Americas - 2495 |
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$0.1213 / $0.1254 | Buy Now |
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Quest Components | 1996 |
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$0.1660 / $0.8300 | Buy Now | |
DISTI #
SSM3K333R
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TME | Transistor: N-MOSFET, unipolar, 30V, 6A, 1W, SOT23F Min Qty: 5 | 6065 |
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$0.0970 / $0.1560 | Buy Now |
Part Details for SSM3K333R,LF(B
SSM3K333R,LF(B CAD Models
SSM3K333R,LF(B Part Data Attributes
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SSM3K333R,LF(B
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
SSM3K333R,LF(B
Toshiba America Electronic Components
Small Signal Field-Effect Transistor, 6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Toshiba | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 6 A | |
Drain-source On Resistance-Max | 0.028 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 28 pF | |
JESD-30 Code | R-PDSO-F3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1 W | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |