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Part Details for SSM3K72KFS by Toshiba America Electronic Components
Overview of SSM3K72KFS by Toshiba America Electronic Components
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Environmental Monitoring
Space Technology
Telecommunications
Price & Stock for SSM3K72KFS
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
SSM3K72KFS,LXHF
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Avnet Americas | Transistor MOSFET N-Channel 60V 0.3A 3-Pin SOT-416 - Tape and Reel (Alt: SSM3K72KFS,LXHF) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 36 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
|
DISTI #
SSM3K72KFS
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TME | Transistor: N-MOSFET, unipolar, 60V, 0.3A, 150mW, SC75 Min Qty: 10 | 11260 |
|
$0.0343 / $0.0902 | Buy Now |
|
|
Win Source Electronics | MOSFETs Silicon N-Channel MOS | 191000 |
|
$0.0250 / $0.0370 | Buy Now |
Part Details for SSM3K72KFS
SSM3K72KFS CAD Models
SSM3K72KFS Part Data Attributes
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SSM3K72KFS
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
SSM3K72KFS
Toshiba America Electronic Components
SMALL SIGNAL, FET
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 36 Weeks | |
| Date Of Intro | 2016-02-12 | |
| Samacsys Manufacturer | Toshiba | |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.3 A | |
| Drain-source On Resistance-Max | 1.75 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 1.3 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |