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Part Details for SSM6L39TU,LF(T by Toshiba America Electronic Components
Overview of SSM6L39TU,LF(T by Toshiba America Electronic Components
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Communication and Networking
Automotive
Price & Stock for SSM6L39TU,LF(T
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
09AK7989
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Newark | Dual Mosfet, N & P Ch, 20V/1.6A/Sot-363F, Channel Type:N And P Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:20V, Continuous Drain Current Id N Channel:1.6A, No. Of Pins:6Pins, Product Range:- Rohs Compliant: Yes |Toshiba SSM6L39TU, LF(T RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 6143 |
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$0.0850 | Buy Now |
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DISTI #
SSM6L39TU,LF(T
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Avnet Asia | Trans MOSFET N/P-CH 20V 1.6A/1.5A 6-Pin UF (Alt: SSM6L39TU,LF(T) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
C1S751201195643
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Chip1Stop | MOSFET RoHS: Compliant Container: Cut Tape | 2105 |
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$0.1640 / $0.2230 | Buy Now |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 3000 |
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$0.1855 | Buy Now |
Part Details for SSM6L39TU,LF(T
SSM6L39TU,LF(T CAD Models
SSM6L39TU,LF(T Part Data Attributes
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SSM6L39TU,LF(T
Toshiba America Electronic Components
Buy Now
Datasheet
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SSM6L39TU,LF(T
Toshiba America Electronic Components
Small Signal Field-Effect Transistor
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Toshiba | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 1.6 A | |
| Drain-source On Resistance-Max | 0.139 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 37 pF | |
| JESD-30 Code | R-PDSO-F6 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |