| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| EPC2001 | Efficient Power Conversion | Check for Price | Power Field-Effect Transistor, 25A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET | STD100N10F7 vs EPC2001 |
Part Details for STD100N10F7 by STMicroelectronics
Results Overview of STD100N10F7 by STMicroelectronics
- Distributor Offerings: (36 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (1 option)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
STD100N10F7 Information
STD100N10F7 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STD100N10F7
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
98Y2468RL
|
Newark | Mosfet, N-Ch, 100V, 80A, To-252-3, |Stmicroelectronics STD100N10F7 RoHS: Compliant Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Tape & Reel | 2876 |
|
$1.2700 / $1.5800 | Buy Now |
|
DISTI #
98Y2468
|
Newark | Mosfet, N-Ch, 100V, 80A, To-252-3, |Stmicroelectronics STD100N10F7 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 2876 |
|
$1.2700 / $3.0300 | Buy Now |
|
DISTI #
78406896
|
Verical | STD100N10F7 STMicroelectronics Transistors MOSFETs N-CH 100V 80A 3-Pin(2+Tab) DPAK T/R - Arrow.com RoHS: Exempt Min Qty: 2500 Package Multiple: 2500 Date Code: 2352 | Americas - 12500 |
|
$0.7100 | Buy Now |
|
DISTI #
93260850
|
Verical | STD100N10F7 STMicroelectronics Transistors MOSFETs N-CH 100V 80A 3-Pin(2+Tab) DPAK T/R - Arrow.com RoHS: Exempt Min Qty: 2 Package Multiple: 1 | Americas - 3261 |
|
$0.9165 / $2.5543 | Buy Now |
|
DISTI #
93937001
|
Verical | STD100N10F7 STMicroelectronics Transistors MOSFETs N-CH 100V 80A 3-Pin(2+Tab) DPAK T/R - Arrow.com RoHS: Exempt Min Qty: 2500 Package Multiple: 2500 Date Code: 2628 | Americas - 2500 |
|
$0.8889 / $0.9490 | Buy Now |
|
DISTI #
68402648
|
Verical | STD100N10F7 STMicroelectronics Transistors MOSFETs N-CH 100V 80A 3-Pin(2+Tab) DPAK T/R - Arrow.com RoHS: Exempt Min Qty: 7 Package Multiple: 1 Date Code: 2313 | Americas - 603 |
|
$0.9420 / $1.0221 | Buy Now |
|
DISTI #
511-STD100N10F7
|
Mouser Electronics | MOSFETs N-Ch 100V 0.0068mOhm 80A STripFETVII 120 RoHS: Compliant | 7907 |
|
$1.0300 / $3.1400 | Buy Now |
|
DISTI #
V36:1790_06557742
|
Arrow Electronics | STD100N10F7 STMicroelectronics Transistors MOSFETs N-CH 100V 80A 3-Pin(2+Tab) DPAK T/R - Arrow.com COO: China RoHS: Exempt Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks Date Code: 2352 | Americas - 12500 |
|
$0.7100 | Buy Now |
|
DISTI #
P02:6590_04914980
|
Arrow Electronics | STD100N10F7 STMicroelectronics Transistors MOSFETs N-CH 100V 80A 3-Pin(2+Tab) DPAK T/R - Arrow.com RoHS: Exempt Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Container: Cut Strips | Asia - 3261 |
|
$0.9165 / $2.5543 | Buy Now |
|
DISTI #
E02:0323_06872980
|
Arrow Electronics | STD100N10F7 STMicroelectronics Transistors MOSFETs N-CH 100V 80A 3-Pin(2+Tab) DPAK T/R - Arrow.com RoHS: Exempt Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks Date Code: 2628 | Europe - 2500 |
|
$0.8861 / $0.9461 | Buy Now |
STD100N10F7 CAD Models
-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
STD100N10F7 Part Data Attributes
|
|
STD100N10F7
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STD100N10F7
STMicroelectronics
Power Field-Effect Transistor, 32A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | To-220fp, 3 Pin | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 26 Weeks | |
| Avalanche Energy Rating (Eas) | 400 Mj | |
| Case Connection | Isolated | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 32 A | |
| Drain-source On Resistance-Max | 0.008 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 10 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 120 W | |
| Pulsed Drain Current-Max (IDM) | 180 A | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STD100N10F7
This table gives cross-reference parts and alternative options found for STD100N10F7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD100N10F7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
STD100N10F7 Frequently Asked Questions (FAQ)
-
The maximum operating frequency of the STD100N10F7 is 100 kHz, but it can be operated at higher frequencies with reduced performance.
-
To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing voltage is typically between 4-10V.
-
The maximum power dissipation of the STD100N10F7 is 125W, but it can be derated based on the ambient temperature and package type.
-
Yes, the STD100N10F7 can operate in high-temperature environments up to 150°C, but the maximum junction temperature should not exceed 175°C.
-
To protect the STD100N10F7 from ESD, handle the device by the body, use an anti-static wrist strap, and store the device in an anti-static bag or container.