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Part Details for STD10NF30 by STMicroelectronics
Results Overview of STD10NF30 by STMicroelectronics
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
STD10NF30 Information
STD10NF30 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STD10NF30
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
47AK6925
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Newark | Mosfet, N-Ch, 300V, 10A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:300V, Continuous Drain Current Id:10A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STD10NF30 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 814 |
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$0.8780 / $1.9600 | Buy Now |
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DISTI #
86AK6457
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Newark | Mosfet, N-Ch, 300V, 10A, To-252 Rohs Compliant: Yes |Stmicroelectronics STD10NF30 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Tape & Reel | 0 |
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$0.7870 / $0.8300 | Buy Now |
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DISTI #
497-19308-1-ND
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DigiKey | MOSFET N-CHANNEL 300V 10A DPAK Min Qty: 1 Lead time: 13 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) |
2849 In Stock |
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$0.5385 / $2.0400 | Buy Now |
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DISTI #
STD10NF30
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Avnet Americas | - Bulk (Alt: STD10NF30) COO: China RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Lead time: 13 Weeks, 0 Days Container: Bulk | 7500 |
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$0.5385 / $0.5744 | Buy Now |
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DISTI #
511-STD10NF30
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Mouser Electronics | MOSFETs Automotive-grade N-channel 300 V, 280 mOhm typ., 10 A, STripFET II Power MOSFET RoHS: Compliant | 3657 |
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$0.5380 / $2.0400 | Buy Now |
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STMicroelectronics | Automotive-grade N-channel 300 V, 280 mOhm typ., 10 A, STripFET II Power MOSFET in a DPAK package COO: Singapore RoHS: Compliant Min Qty: 1 | 3657 |
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$0.6900 / $2.0000 | Buy Now |
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DISTI #
STD10NF30
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Avnet Silica | (Alt: STD10NF30) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days | Silica - 2500 |
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Buy Now | |
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DISTI #
STD10NF30
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EBV Elektronik | (Alt: STD10NF30) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for STD10NF30
STD10NF30 CAD Models
STD10NF30 Part Data Attributes
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STD10NF30
STMicroelectronics
Buy Now
Datasheet
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STD10NF30
STMicroelectronics
Power Field-Effect Transistor, 10A I(D), 300V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | Dpak-3/2 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Avalanche Energy Rating (Eas) | 175 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 300 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.33 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | N-Channel | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Reference Standard | Aec-Q101 | |
| Surface Mount | Yes | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
STD10NF30 Frequently Asked Questions (FAQ)
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The maximum junction temperature for the STD10NF30 is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
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The power dissipation of the STD10NF30 can be calculated using the formula: Pd = Vds x Ids, where Vds is the drain-source voltage and Ids is the drain-source current. You can also use the thermal resistance (Rth) and the maximum junction temperature to calculate the power dissipation.
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The recommended gate resistor value for the STD10NF30 is typically between 10 ohms to 100 ohms, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) but may increase the switching time.
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Yes, the STD10NF30 is suitable for high-frequency switching applications up to 100 kHz. However, you need to ensure that the device is properly cooled and the switching frequency is within the recommended range to avoid overheating and reduce electromagnetic interference (EMI).
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You can protect the STD10NF30 from overvoltage and overcurrent by using a voltage regulator, a current limiter, and a fuse in your circuit design. Additionally, you can use a gate driver with built-in overcurrent protection and undervoltage lockout (UVLO) to prevent damage to the device.