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Part Details for STI57N65M5 by STMicroelectronics
Overview of STI57N65M5 by STMicroelectronics
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for STI57N65M5
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
89W1479
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Newark | 16/32-Bits Micros |Stmicroelectronics STI57N65M5 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$8.7000 | Buy Now |
Part Details for STI57N65M5
STI57N65M5 CAD Models
STI57N65M5 Part Data Attributes
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STI57N65M5
STMicroelectronics
Buy Now
Datasheet
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STI57N65M5
STMicroelectronics
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh M5 Power MOSFET in I2PAK package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 960 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 42 A | |
| Drain-source On Resistance-Max | 0.063 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 168 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STI57N65M5
This table gives cross-reference parts and alternative options found for STI57N65M5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STI57N65M5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPW65R080CFDAFKSA1 | Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | STI57N65M5 vs IPW65R080CFDAFKSA1 |
| IPW65R080CFD | Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | STI57N65M5 vs IPW65R080CFD |
| IXKP35N60C5 | Power Field-Effect Transistor, 35A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Littelfuse Inc | STI57N65M5 vs IXKP35N60C5 |
| FCH47N60F-F133 | Power MOSFET, N-Channel, SUPERFET®, FRFET®, 600 V, 47 A, 73 mΩ, TO-247, TO-247 3L, 450-TUBE | onsemi | STI57N65M5 vs FCH47N60F-F133 |
| NVB072N65S3 | Single N-Channel Power MOSFET SUPERFET® III, Easy Drive, 650 V , 44 A, 72 mΩ, D2PAK, 800-REEL, Automotive Qualified | onsemi | STI57N65M5 vs NVB072N65S3 |
| IPB60R099C6 | Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Infineon Technologies AG | STI57N65M5 vs IPB60R099C6 |
| IPW65R080CFDA | Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | STI57N65M5 vs IPW65R080CFDA |
| IPW65R080CFDFKSA1 | Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | STI57N65M5 vs IPW65R080CFDFKSA1 |
| IPB60R099C6ATMA1 | Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STI57N65M5 vs IPB60R099C6ATMA1 |
| APT38N60BC6 | Power Field-Effect Transistor, 38A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Microchip Technology Inc | STI57N65M5 vs APT38N60BC6 |