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Part Details for STS1DNC45 by STMicroelectronics
Results Overview of STS1DNC45 by STMicroelectronics
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STS1DNC45 Information
STS1DNC45 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STS1DNC45
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
45AC7739
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Newark | Mosfet, Dual N-Ch, 450V, 0.4A, Soic, Channel Type:N Channel, Drain Source Voltage Vds N Channel:450V, Drain Source Voltage Vds P Channel:450V, Continuous Drain Current Id N Channel:400Ma, Continuous Drain Current Id P Channel:400Ma Rohs Compliant: Yes |Stmicroelectronics STS1DNC45 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.5380 / $1.7000 | Buy Now |
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DISTI #
497-12678-1-ND
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DigiKey | MOSFET 2N-CH 450V 0.4A 8SOIC Min Qty: 1 Lead time: 13 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) |
3337 In Stock |
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$0.7869 / $2.6800 | Buy Now |
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DISTI #
STS1DNC45
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Avnet Americas | - Tape and Reel (Alt: STS1DNC45) COO: Singapore RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days Container: Tape & Reel | 0 |
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$0.7494 / $0.7968 | Buy Now |
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DISTI #
511-STS1DNC45
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Mouser Electronics | MOSFETs N-Ch 450 Volt 0.4 A RoHS: Compliant | 4686 |
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$0.7860 / $2.6400 | Buy Now |
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STMicroelectronics | Dual N-channel 450 V, 4.1 Omh typ., 0.4 A SuperMESH Power MOSFET in a SO-8 package COO: Singapore RoHS: Compliant Min Qty: 1 | 4686 |
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$0.9400 / $2.5900 | Buy Now |
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Future Electronics | Dual N-Channel 450 V 4.5 Ohm Surface Mount SuperMESH Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks Container: Reel | 0Reel |
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$0.8750 / $0.9000 | Buy Now |
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Future Electronics | Dual N-Channel 450 V 4.5 Ohm Surface Mount SuperMESH Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks Container: Reel | 0Reel |
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$0.8750 / $0.9000 | Buy Now |
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DISTI #
STS1DNC45
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TME | Transistor: N-MOSFET, unipolar, 450V, 0.25A, Idm: 1.6A, 2W, SO8 Min Qty: 1 | 2490 |
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$0.5380 / $1.5000 | Buy Now |
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Ameya Holding Limited | Dual N-Channel 450 V 4.5 Ohm Surface Mount SuperMESH Power Mosfet - SOIC-8 | 22500 |
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RFQ | |
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DISTI #
STS1DNC45
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IBS Electronics | DUAL N-CHANNEL 450V - 4.1 OHM - 0.4A SO-8 SUPERMESH POWER MOSFET Min Qty: 2500 Package Multiple: 1 | 2500 |
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$0.3990 / $0.4130 | Buy Now |
Part Details for STS1DNC45
STS1DNC45 CAD Models
STS1DNC45 Part Data Attributes
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STS1DNC45
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STS1DNC45
STMicroelectronics
Power Field-Effect Transistor, 0.4A I(D), 450V, 4.5ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | SOT | |
| Package Description | So-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Avalanche Energy Rating (Eas) | 30 Mj | |
| Configuration | Separate, 2 Elements With Built-In Diode | |
| DS Breakdown Voltage-Min | 450 V | |
| Drain Current-Max (ID) | 0.4 A | |
| Drain-source On Resistance-Max | 4.5 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 225 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 1.6 W | |
| Pulsed Drain Current-Max (IDM) | 1.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
STS1DNC45 Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1mm clearance around the device for airflow and heat dissipation.
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Implement a thermal management strategy, such as a heat sink or thermal interface material, to keep the junction temperature below 150°C. Also, ensure proper airflow and avoid blocking the device's thermal pads.
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A 10uF to 22uF X7R or X5R ceramic capacitor is recommended, placed as close to the VIN pin as possible, to filter input voltage noise and ensure stable operation.
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Use a shielded enclosure, keep the device away from antennas and high-frequency circuits, and ensure proper grounding and decoupling. Also, consider adding EMI filters or common-mode chokes to the input and output lines.
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The maximum allowed voltage drop is 0.5V. Ensure that the input voltage is within the recommended range (4.5V to 18V) and that the output voltage is within the specified range (3.3V ± 5%) to maintain reliable operation.