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Power Field-Effect Transistor, 4A I(D), 1500V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STW4N150 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
26M3822
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Newark | Power Mosfet, N Channel, 4 A, 1.5 Kv, 7 Ohm, 10 V, 4 V Rohs Compliant: Yes |Stmicroelectronics STW4N150 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 2911 |
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$3.8600 / $4.5600 | Buy Now |
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DISTI #
497-5092-5-ND
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DigiKey | MOSFET N-CH 1500V 4A TO247-3 Min Qty: 1 Lead time: 16 Weeks Container: Tube |
601 In Stock |
|
$3.0000 / $7.2300 | Buy Now |
|
DISTI #
STW4N150
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Avnet Americas | Power MOSFET, N Channel, 1.5 kV, 4 A, 7 ohm, TO-247, Through Hole - Rail/Tube (Alt: STW4N150) COO: China RoHS: Compliant Min Qty: 600 Package Multiple: 1 Lead time: 16 Weeks, 0 Days Container: Tube | 600 |
|
$3.0000 / $3.2000 | Buy Now |
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DISTI #
26M3822
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Avnet Americas | Power MOSFET, N Channel, 1.5 kV, 4 A, 7 ohm, TO-247, Through Hole - Bulk (Alt: 26M3822) COO: China RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 2912 Partner Stock |
|
$4.5000 / $8.5800 | Buy Now |
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DISTI #
511-STW4N150
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Mouser Electronics | MOSFETs N-channel 1500 V PowerMesh RoHS: Compliant | 1035 |
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$3.0000 / $7.2300 | Buy Now |
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STMicroelectronics | N-channel 1500 V, 6 Ohm typ., 4 A, PowerMESH Power MOSFET in a TO-247 package COO: Singapore RoHS: Compliant Min Qty: 1 | 1095 |
|
$2.9400 / $7.0900 | Buy Now |
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Future Electronics | STW4N150 Series 1500 V 5 Ohm 4 A N-Channel PowerMESH™ Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 600 Lead time: 20 Weeks Container: Reel | 0Reel |
|
$3.3400 / $3.4000 | Buy Now |
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Future Electronics | STW4N150 Series 1500 V 5 Ohm 4 A N-Channel PowerMESH™ Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Lead time: 20 Weeks Container: Tube | 0Tube |
|
$3.3400 / $3.6200 | Buy Now |
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DISTI #
92040418
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Verical | Trans MOSFET N-CH 1.5KV 4A 3-Pin(3+Tab) TO-247 Tube RoHS: Exempt Min Qty: 600 Package Multiple: 600 Date Code: 2543 | Americas - 9000 |
|
$2.9300 / $2.9940 | Buy Now |
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DISTI #
87902618
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Verical | Trans MOSFET N-CH 1.5KV 4A 3-Pin(3+Tab) TO-247 Tube RoHS: Exempt Min Qty: 3 Package Multiple: 1 Date Code: 2511 | Americas - 1845 |
|
$4.8542 | Buy Now |
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STW4N150
STMicroelectronics
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Datasheet
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Compare Parts:
STW4N150
STMicroelectronics
Power Field-Effect Transistor, 4A I(D), 1500V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | TO-247 | |
| Package Description | Rohs Compliant Package-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Avalanche Energy Rating (Eas) | 350 Mj | |
| Case Connection | Isolated | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 1500 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 7 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 160 W | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
This table gives cross-reference parts and alternative options found for STW4N150. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW4N150, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STFW4N150 | STMicroelectronics | $2.5168 | Power Field-Effect Transistor, 4A I(D), 1500V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STW4N150 vs STFW4N150 |
The STW4N150 can operate from -40°C to 150°C, making it suitable for high-reliability applications.
To ensure proper biasing, connect the VCC pin to a stable voltage source between 1.65V and 3.6V, and the VSS pin to ground. Also, ensure the input voltage (VIN) is within the recommended range.
To minimize noise and EMI, use a multi-layer PCB with a solid ground plane, keep the input and output traces short and separate, and use a decoupling capacitor (e.g., 100nF) between VCC and VSS.
Yes, the STW4N150 is suitable for high-frequency applications up to 100 MHz. However, ensure proper PCB layout and decoupling to minimize noise and EMI.
Use a voltage regulator to limit the input voltage to the recommended range. Add ESD protection diodes (e.g., 1N4148) between the input pins and VCC/VSS to protect against electrostatic discharge.