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STW4N150 by: STMicroelectronics

Power Field-Effect Transistor, 4A I(D), 1500V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Details for STW4N150 by STMicroelectronics

Results Overview of STW4N150 by STMicroelectronics

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STW4N150 Information

STW4N150 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STW4N150

Part # Distributor Description Stock Price Buy
DISTI # 26M3822
Newark Power Mosfet, N Channel, 4 A, 1.5 Kv, 7 Ohm, 10 V, 4 V Rohs Compliant: Yes |Stmicroelectronics STW4N150 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 2911
  • 1 $4.5600
  • 10 $3.8600
  • 25 $3.8600
  • 60 $3.8600
  • 120 $3.8600
$3.8600 / $4.5600 Buy Now
DISTI # 497-5092-5-ND
DigiKey MOSFET N-CH 1500V 4A TO247-3 Min Qty: 1 Lead time: 16 Weeks Container: Tube 601
In Stock
  • 1 $7.2300
  • 30 $4.1657
  • 120 $3.4911
  • 510 $3.0000
$3.0000 / $7.2300 Buy Now
DISTI # STW4N150
Avnet Americas Power MOSFET, N Channel, 1.5 kV, 4 A, 7 ohm, TO-247, Through Hole - Rail/Tube (Alt: STW4N150) COO: China RoHS: Compliant Min Qty: 600 Package Multiple: 1 Lead time: 16 Weeks, 0 Days Container: Tube 600
  • 600 $3.2000
  • 1,200 $3.1373
  • 2,400 $3.0928
  • 4,800 $3.0496
  • 9,600 $3.0000
$3.0000 / $3.2000 Buy Now
DISTI # 26M3822
Avnet Americas Power MOSFET, N Channel, 1.5 kV, 4 A, 7 ohm, TO-247, Through Hole - Bulk (Alt: 26M3822) COO: China RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 2912 Partner Stock
  • 1 $8.5800
  • 10 $4.9900
  • 25 $4.7900
  • 60 $4.6400
  • 120 $4.5000
  • 270 $6.0900
$4.5000 / $8.5800 Buy Now
DISTI # 511-STW4N150
Mouser Electronics MOSFETs N-channel 1500 V PowerMesh RoHS: Compliant 1035
  • 1 $7.2300
  • 10 $3.7500
  • 100 $3.0000
$3.0000 / $7.2300 Buy Now
STMicroelectronics N-channel 1500 V, 6 Ohm typ., 4 A, PowerMESH Power MOSFET in a TO-247 package COO: Singapore RoHS: Compliant Min Qty: 1 1095
  • 1 $7.0900
  • 10 $3.3400
  • 100 $2.9400
$2.9400 / $7.0900 Buy Now
Future Electronics STW4N150 Series 1500 V 5 Ohm 4 A N-Channel PowerMESH™ Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 600 Lead time: 20 Weeks Container: Reel 0
Reel
  • 600 $3.4000
  • 1,200 $3.3700
  • 1,800 $3.3600
  • 2,400 $3.3400
$3.3400 / $3.4000 Buy Now
Future Electronics STW4N150 Series 1500 V 5 Ohm 4 A N-Channel PowerMESH™ Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Lead time: 20 Weeks Container: Tube 0
Tube
  • 1 $3.6200
  • 20 $3.5400
  • 75 $3.4900
  • 250 $3.4400
  • 1,000 $3.3400
$3.3400 / $3.6200 Buy Now
DISTI # 92040418
Verical Trans MOSFET N-CH 1.5KV 4A 3-Pin(3+Tab) TO-247 Tube RoHS: Exempt Min Qty: 600 Package Multiple: 600 Date Code: 2543 Americas - 9000
  • 600 $2.9940
  • 3,000 $2.9640
  • 6,000 $2.9340
  • 9,000 $2.9300
$2.9300 / $2.9940 Buy Now
DISTI # 87902618
Verical Trans MOSFET N-CH 1.5KV 4A 3-Pin(3+Tab) TO-247 Tube RoHS: Exempt Min Qty: 3 Package Multiple: 1 Date Code: 2511 Americas - 1845
  • 3 $4.8542
$4.8542 Buy Now
DISTI # 76465757
Verical Trans MOSFET N-CH 1.5KV 4A 3-Pin(3+Tab) TO-247 Tube RoHS: Exempt Min Qty: 11 Package Multiple: 1 Americas - 672
  • 11 $7.2100
  • 50 $3.4000
  • 100 $3.3400
  • 200 $2.9400
  • 500 $2.7700
$2.7700 / $7.2100 Buy Now
Bristol Electronics   14
RFQ
DISTI # STW4N150
TME Transistor: N-MOSFET, unipolar, 1500V, 2.5A, 160W, TO247 Min Qty: 1 44
  • 1 $6.9500
  • 5 $5.2600
  • 10 $5.0100
$5.0100 / $6.9500 Buy Now
Ameya Holding Limited N-Channel 1.5 kV 7 Ohm Flange Mount PowerMESH™ Power MOSFET - TO-247 28880
RFQ
DISTI # STW4N150
IBS Electronics N-CHANNEL 1500 V 5 OHM 4 A POWERMESH(TM) POWER MOSFET IN TO-247 Min Qty: 3 Package Multiple: 1 10
  • 3 $4.9560
  • 15 $4.8440
  • 50 $4.7740
  • 150 $4.7040
  • 500 $4.5640
  • 600 $4.1580
  • 1,200 $4.1020
$4.1020 / $4.9560 Buy Now
DISTI # STW4N150
Avnet Silica Power MOSFET N Channel 15 kV 4 A 7 ohm TO247 Through Hole (Alt: STW4N150) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Silica - 17160
Buy Now
DISTI # STW4N150
Chip One Stop Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Tube 672
  • 1 $7.2100
  • 10 $3.4000
  • 50 $3.3400
  • 100 $2.9400
  • 200 $2.7700
  • 500 $2.7000
  • 1,200 $2.5300
  • 4,800 $2.3700
$2.3700 / $7.2100 Buy Now
DISTI # STW4N150
EBV Elektronik Power MOSFET N Channel 15 kV 4 A 7 ohm TO247 Through Hole (Alt: STW4N150) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days EBV - 28860
Buy Now
Sense Electronic Company Limited TO-247 427
RFQ
Win Source Electronics MOSFET N-CH 1500V 4A TO-247 156670
  • 50 $1.0850
  • 100 $1.0150
  • 155 $0.9800
  • 220 $0.9100
  • 290 $0.8750
  • 360 $0.8400
$0.8400 / $1.0850 Buy Now

Part Details for STW4N150

STW4N150 CAD Models

STW4N150 Part Data Attributes

STW4N150 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STW4N150 STMicroelectronics Power Field-Effect Transistor, 4A I(D), 1500V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Rohs Code Yes
Part Life Cycle Code Active
Part Package Code TO-247
Package Description Rohs Compliant Package-3
Pin Count 3
Reach Compliance Code Not Compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Avalanche Energy Rating (Eas) 350 Mj
Case Connection Isolated
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 1500 V
Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 7 Ω
FET Technology Metal-Oxide Semiconductor
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode Enhancement Mode
Operating Temperature-Max 150 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Flange Mount
Polarity/Channel Type N-Channel
Power Dissipation-Max (Abs) 160 W
Pulsed Drain Current-Max (IDM) 12 A
Qualification Status Not Qualified
Surface Mount No
Terminal Finish Matte Tin (Sn) - Annealed
Terminal Form Through-Hole
Terminal Position Single
Transistor Application Switching
Transistor Element Material Silicon

Alternate Parts for STW4N150

This table gives cross-reference parts and alternative options found for STW4N150. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW4N150, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
STFW4N150 STMicroelectronics $2.5168 Power Field-Effect Transistor, 4A I(D), 1500V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET STW4N150 vs STFW4N150
equivalents icon

STW4N150 Related Parts

STW4N150 Frequently Asked Questions (FAQ)

  • The STW4N150 can operate from -40°C to 150°C, making it suitable for high-reliability applications.

  • To ensure proper biasing, connect the VCC pin to a stable voltage source between 1.65V and 3.6V, and the VSS pin to ground. Also, ensure the input voltage (VIN) is within the recommended range.

  • To minimize noise and EMI, use a multi-layer PCB with a solid ground plane, keep the input and output traces short and separate, and use a decoupling capacitor (e.g., 100nF) between VCC and VSS.

  • Yes, the STW4N150 is suitable for high-frequency applications up to 100 MHz. However, ensure proper PCB layout and decoupling to minimize noise and EMI.

  • Use a voltage regulator to limit the input voltage to the recommended range. Add ESD protection diodes (e.g., 1N4148) between the input pins and VCC/VSS to protect against electrostatic discharge.

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