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Transistors Power Field-Effect Transistors STW80N06-10

Transistors
STW80N06-10
STMicroelectronics
Description: 80A, 60V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN

Overview of STW80N06-10 by STMicroelectronics

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Space Technology Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Medical Imaging Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Automotive Consumer Electronics Education and Research Security and Surveillance Audio and Video Systems Computing and Data Storage Aerospace and Defense Healthcare Renewable Energy Entertainment and Gaming Robotics and Drones

Price & Stock for STW80N06-10 by STMicroelectronics

Part # Manufacturer Description Stock Price Buy
Quest Components 80 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 60
  • 1 $3.4500
  • 4 $2.3000
  • 12 $1.7250
$1.7250 / $3.4500 Buy Now

CAD Models for STW80N06-10 by STMicroelectronics
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Part Data Attributes for STW80N06-10 by STMicroelectronics
Parametric Data

STW80N06-10
STMicroelectronics
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
STMICROELECTRONICS
Part Package Code
TO-247
Package Description
TO-247, 3 PIN
Pin Count
3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
600 mJ
Case Connection
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
80 A
Drain-source On Resistance-Max
0.01 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
180 W
Pulsed Drain Current-Max (IDM)
320 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. STW80N06-10
    STMicroelectronics
    80A, 60V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
    VS

Alternate Parts for STW80N06-10

This table gives cross-reference parts and alternative options found for STW80N06-10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW80N06-10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
NDB706AL 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Texas Instruments STW80N06-10 vs NDB706AL
IPB80N06S2LH5ATMA1 Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG STW80N06-10 vs IPB80N06S2LH5ATMA1
IXFH12N100F Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 IXYS Corporation STW80N06-10 vs IXFH12N100F
F10F6N Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FTO-220, 3 PIN Shindengen Electronic Manufacturing Co Ltd STW80N06-10 vs F10F6N
STP9NK65Z N-channel 650 V - 1 Ohm - 6.4 A TO-220 Zener-protected SuperMESH(TM) Power MOSFET STMicroelectronics STW80N06-10 vs STP9NK65Z
STD5NE10T4 5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 STMicroelectronics STW80N06-10 vs STD5NE10T4
NDB705BEL TRANSISTOR 70 A, 50 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power National Semiconductor Corporation STW80N06-10 vs NDB705BEL
IXFH30N40Q Power Field-Effect Transistor, 30A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Littelfuse Inc STW80N06-10 vs IXFH30N40Q
SPB80N06S2-07 Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN Infineon Technologies AG STW80N06-10 vs SPB80N06S2-07
SPP80N03S2L-05 Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG STW80N06-10 vs SPP80N03S2L-05

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