Datasheets
T2N7002AK,LM(B by: Toshiba America Electronic Components

Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for T2N7002AK,LM(B by Toshiba America Electronic Components

Overview of T2N7002AK,LM(B by Toshiba America Electronic Components

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Price & Stock for T2N7002AK,LM(B

Part # Distributor Description Stock Price Buy
Quest Components   1228
  • 1 $0.4000
  • 32 $0.1800
  • 279 $0.1200
$0.1200 / $0.4000 Buy Now
Ameya Holding Limited   384000
RFQ
DISTI # T2N7002AK,LM(B
Avnet Asia Trans MOSFET N-CH 60V 0.2A 3-Pin SOT-23 (Alt: T2N7002AK,LM(B) RoHS: Compliant Min Qty: 24000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days 0
RFQ

Part Details for T2N7002AK,LM(B

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T2N7002AK,LM(B Part Data Attributes

T2N7002AK,LM(B Toshiba America Electronic Components
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T2N7002AK,LM(B Toshiba America Electronic Components Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description SOT-23, 3 PIN
Reach Compliance Code compliant
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.2 A
Drain-source On Resistance-Max 4.7 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 0.7 pF
JESD-30 Code R-PDSO-G3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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