Part Details for TIP31BG by Galaxy Microelectronics
Overview of TIP31BG by Galaxy Microelectronics
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Part Details for TIP31BG
TIP31BG CAD Models
TIP31BG Part Data Attributes:
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TIP31BG
Galaxy Microelectronics
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TIP31BG
Galaxy Microelectronics
Power Bipolar Transistor,
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | |
| Package Description | TO-263, 3/2 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | TUBE: 50 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 3 A | |
| Collector-Emitter Voltage-Max | 80 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 10 | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 2 W | |
| Power Dissipation-Max (Abs) | 40 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 3 MHz | |
| VCEsat-Max | 1.2 V |