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Small Signal Field-Effect Transistor, 26A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
264-TPN11006PLLQCT-ND
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DigiKey | MOSFET N-CH 60V 26A 8TSON Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
9997 In Stock |
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$0.2025 / $0.6100 | Buy Now |
DISTI #
TPN11006PL,LQ
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Avnet Americas | Power MOSFET N Channel Enhancement 60V 54A 8-Pin TSON Surface Mount - Tape and Reel (Alt: TPN11006PL,LQ) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.2074 / $0.2479 | Buy Now |
DISTI #
757-TPN11006PLLQ
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Mouser Electronics | MOSFET POWER MOSFET TRANSISTOR RoHS: Compliant | 34476 |
|
$0.2040 / $0.6000 | Buy Now |
DISTI #
TPN11006PL,LQ
|
Avnet Americas | Power MOSFET N Channel Enhancement 60V 54A 8-Pin TSON Surface Mount - Tape and Reel (Alt: TPN11006PL,LQ) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.2074 / $0.2479 | Buy Now |
DISTI #
TPN11006PL,LQ
|
Avnet Americas | Power MOSFET N Channel Enhancement 60V 54A 8-Pin TSON Surface Mount - Tape and Reel (Alt: TPN11006PL,LQ) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.2074 / $0.2479 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
TPN11006PL,LQ
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TPN11006PL,LQ
Toshiba America Electronic Components
Small Signal Field-Effect Transistor, 26A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | TSON-8 | |
Reach Compliance Code | unknown | |
Samacsys Manufacturer | Toshiba | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 26 A | |
Drain-source On Resistance-Max | 0.0114 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 55 pF | |
JESD-30 Code | S-PDSO-F8 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 61 W | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |