Part Details for TPN3R704PL,L1Q by Toshiba America Electronic Components
Overview of TPN3R704PL,L1Q by Toshiba America Electronic Components
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for TPN3R704PL,L1Q
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
TPN3R704PLL1QCT-ND
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DigiKey | MOSFET N-CH 40V 80A 8TSON Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
9135 In Stock |
|
$0.2475 / $0.7300 | Buy Now |
DISTI #
TPN3R704PL,L1Q
|
Avnet Americas | Pb-F POWER MOSFET TRANSISTOR TSON-ADV PD=86W F=1MHZ - Tape and Reel (Alt: TPN3R704PL,L1Q) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 12 Weeks, 0 Days Container: Reel | 70000 |
|
$0.2188 / $0.2346 | Buy Now |
DISTI #
757-TPN3R704PLL1Q
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Mouser Electronics | MOSFET 40 Volt N-Channel RoHS: Compliant | 4071 |
|
$0.2470 / $0.7100 | Buy Now |
DISTI #
TPN3R704PL,L1Q
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Avnet Americas | Pb-F POWER MOSFET TRANSISTOR TSON-ADV PD=86W F=1MHZ - Tape and Reel (Alt: TPN3R704PL,L1Q) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 12 Weeks, 0 Days Container: Reel | 70000 |
|
$0.2188 / $0.2346 | Buy Now |
|
Chip1Cloud | MOSFET N-CH 40V 80A 8TSON | 5135 |
|
RFQ |
Part Details for TPN3R704PL,L1Q
TPN3R704PL,L1Q CAD Models
TPN3R704PL,L1Q Part Data Attributes:
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TPN3R704PL,L1Q
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TPN3R704PL,L1Q
Toshiba America Electronic Components
MOSFET N-CH 40V 80A TSON
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 53 Weeks, 1 Day | |
Avalanche Energy Rating (Eas) | 10 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.0037 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 80 pF | |
JESD-30 Code | S-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 86 W | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |