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VRF157FLG by:

RF Power Field-Effect Transistor

Part Details for VRF157FLG by Microchip Technology Inc

Overview of VRF157FLG by Microchip Technology Inc

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Part Details for VRF157FLG

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VRF157FLG Part Data Attributes

VRF157FLG Microchip Technology Inc
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VRF157FLG Microchip Technology Inc RF Power Field-Effect Transistor
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 170 V
Drain Current-Max (ID) 60 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 65 pF
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Gain-Min (Gp) 17 dB
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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