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Diodes Rectifier Diodes VS-ETH0806-M3

Diodes
VS-ETH0806-M3
Description: DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Rectifier Diode

Overview of VS-ETH0806-M3 by Vishay Semiconductors

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Space Technology Aerospace and Defense Energy and Power Systems Renewable Energy

Price & Stock for VS-ETH0806-M3 by Vishay Semiconductors

Part # Manufacturer Description Stock Price Buy
DISTI # VS-ETH0806-M3-ND
DigiKey DIODE GEN PURP 600V 8A TO220AC Min Qty: 1 Lead time: 15 Weeks Container: Bulk 4069
In Stock
  • 1 $1.0600
  • 50 $0.8536
  • 100 $0.6764
  • 500 $0.5733
  • 1,000 $0.4670
  • 2,000 $0.4396
  • 5,000 $0.4187
  • 10,000 $0.3994
$0.3994 / $1.0600 Buy Now

CAD Models for VS-ETH0806-M3 by Vishay Semiconductors
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Part Data Attributes for VS-ETH0806-M3 by Vishay Semiconductors
Parametric Data

VS-ETH0806-M3
Vishay Semiconductors
Buy Now
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
VISHAY SEMICONDUCTORS
Part Package Code
TO-220AC
Package Description
R-PSFM-T2
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.80
Samacsys Manufacturer
Vishay
Additional Feature
FREE WHEELING DIODE, LOW LEAKAGE CURRENT
Application
HYPERFAST SOFT RECOVERY HIGH POWER
Case Connection
CATHODE
Configuration
SINGLE
Diode Element Material
SILICON
Diode Type
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.85 V
JEDEC-95 Code
TO-220AC
JESD-30 Code
R-PSFM-T2
Non-rep Pk Forward Current-Max
80 A
Number of Elements
1
Number of Phases
1
Number of Terminals
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Output Current-Max
8 A
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
600 V
Reverse Recovery Time-Max
0.028 µs
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Want to compare parts?
  1. VS-ETH0806-M3
    Vishay Semiconductors
    DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Rectifier Diode
    VS

Alternate Parts for VS-ETH0806-M3

This table gives cross-reference parts and alternative options found for VS-ETH0806-M3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VS-ETH0806-M3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
DSEI8-06AS Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3 IXYS Corporation VS-ETH0806-M3 vs DSEI8-06AS
UGB8JTHE3/81 Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 Vishay Intertechnologies VS-ETH0806-M3 vs UGB8JTHE3/81
ISL9R860S3S Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB, Fairchild Semiconductor Corporation VS-ETH0806-M3 vs ISL9R860S3S
VS-ETH0806-M3 Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC, Vishay Intertechnologies VS-ETH0806-M3 vs VS-ETH0806-M3
RURP860_NL Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC, LEAD FREE, TO-220AC, 2 PIN Fairchild Semiconductor Corporation VS-ETH0806-M3 vs RURP860_NL
VS-ETH0806FP-M3 Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC, TO-220, FULL PACK-2 Vishay Intertechnologies VS-ETH0806-M3 vs VS-ETH0806FP-M3
UGB8JTHE3_A/I Rectifier Diode, Vishay Intertechnologies VS-ETH0806-M3 vs UGB8JTHE3_A/I
UGB8JT-E3/81 DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode Vishay Semiconductors VS-ETH0806-M3 vs UGB8JT-E3/81
MUR860S_L2_00001 Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-252, PanJit Semiconductor VS-ETH0806-M3 vs MUR860S_L2_00001
NTE598 Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220, NTE Electronics Inc VS-ETH0806-M3 vs NTE598

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