Part Details for YJL2300A by Yangzhou Yangjie Electronics Co Ltd
Overview of YJL2300A by Yangzhou Yangjie Electronics Co Ltd
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Energy and Power Systems
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Automotive
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Renewable Energy
Entertainment and Gaming
Price & Stock for YJL2300A
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
YJL2300A-YAN
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TME | Transistor: N-MOSFET, TRENCH POWER LV, unipolar, 20V, 3.6A, 1W Min Qty: 20 | 200 |
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$0.0248 / $0.0485 | Buy Now |
Part Details for YJL2300A
YJL2300A CAD Models
YJL2300A Part Data Attributes
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YJL2300A
Yangzhou Yangjie Electronics Co Ltd
Buy Now
Datasheet
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YJL2300A
Yangzhou Yangjie Electronics Co Ltd
Small Signal Field-Effect Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | YANGZHOU YANGJIE ELECTRONICS CO LTD | |
Package Description | , | |
Reach Compliance Code | compliant | |
Date Of Intro | 2020-09-24 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 4.5 A | |
Drain-source On Resistance-Max | 0.025 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 70 pF | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 1 W | |
Power Dissipation-Max (Abs) | 1 W | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |