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Overview of YJQ30N03A by Yangzhou Yangjie Electronics Co Ltd
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- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
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- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Industrial Automation
Energy and Power Systems
Renewable Energy
Robotics and Drones
CAD Models for YJQ30N03A by Yangzhou Yangjie Electronics Co Ltd
Part Data Attributes for YJQ30N03A by Yangzhou Yangjie Electronics Co Ltd
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|
---|---|
Rohs Code
|
Yes
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Part Life Cycle Code
|
Not Recommended
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Ihs Manufacturer
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YANGZHOU YANGJIE ELECTRONICS CO LTD
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Package Description
|
,
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Reach Compliance Code
|
compliant
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ECCN Code
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EAR99
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Date Of Intro
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2020-09-17
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Avalanche Energy Rating (Eas)
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112 mJ
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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30 V
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Drain Current-Max (ID)
|
30 A
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Drain-source On Resistance-Max
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0.013 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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Feedback Cap-Max (Crss)
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283 pF
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JESD-30 Code
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S-PDSO-N8
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Number of Elements
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1
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Number of Terminals
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8
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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175 °C
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Operating Temperature-Min
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-55 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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SQUARE
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Package Style
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SMALL OUTLINE
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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21 W
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Pulsed Drain Current-Max (IDM)
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115 A
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Surface Mount
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YES
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Terminal Form
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NO LEAD
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Terminal Position
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DUAL
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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