Parametric results for: YJQ30N03A under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

112.0 mJ 2

2 hits Apply

DRAIN 2

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

30 V 2

2 hits Apply

Drain Current-Max (ID) (1)

30 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

13 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

164 pF 1 283 pF 1

Min (pF) - Max (pF)

2 hits Apply

S-PDSO-N8 2

2 hits Apply

Manufacturer (1)

Yangzhou Yangjie Electronics Co Ltd 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

8 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

175.0 °C 2

2 hits Apply

-55.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

SQUARE 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Not Recommended 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

21 W 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply