Part Details for ZVP2110G by Zetex / Diodes Inc
Overview of ZVP2110G by Zetex / Diodes Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for ZVP2110G
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | P-CHANNEL 100 VOLT MOSFET Power Field-Effect Transistor, 0.31A I(D), 100V, 8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | Europe - 220 |
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RFQ | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 300 |
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$0.4450 / $1.0500 | Buy Now |
Part Details for ZVP2110G
ZVP2110G CAD Models
ZVP2110G Part Data Attributes:
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ZVP2110G
Zetex / Diodes Inc
Buy Now
Datasheet
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Compare Parts:
ZVP2110G
Zetex / Diodes Inc
Power Field-Effect Transistor, 0.31A I(D), 100V, 8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | ZETEX PLC | |
| Package Description | SOT-223, 4 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 0.31 A | |
| Drain-source On Resistance-Max | 8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 10 pF | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 3 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 27 ns | |
| Turn-on Time-Max (ton) | 22 ns |
Alternate Parts for ZVP2110G
This table gives cross-reference parts and alternative options found for ZVP2110G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ZVP2110G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| ZVP2110G | Power Field-Effect Transistor, 0.31A I(D), 100V, 8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Diodes Incorporated | ZVP2110G vs ZVP2110G |
| ZVP2110GTA | Power Field-Effect Transistor, 0.31A I(D), 100V, 8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Diodes Incorporated | ZVP2110G vs ZVP2110GTA |