Parametric results for: HY57V under DRAMs

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MT4KTF25664HZ-1G9P1
Micron Technology Inc
$1.0000 Yes Active 17.1799 Gbit 64 256MX64 1.35 V SINGLE BANK PAGE BURST DDR3L DRAM MODULE AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY 1 1 256000000 268.4355 M SYNCHRONOUS YES 1.45 V 1.283 V CMOS COMMERCIAL R-XZMA-N204 70 °C 260 30 204 UNSPECIFIED DIMM RECTANGULAR MICROELECTRONIC ASSEMBLY NO NO LEAD 600 µm ZIG-ZAG 30.15 mm 67.6 mm 3.8 mm MICRON TECHNOLOGY INC DIMM, compliant EAR99 8542.32.00.36 Micron
IS43LQ16128A-062BLI
Integrated Silicon Solution Inc
$1.0000 Yes Active 2.1475 Gbit 16 128MX16 1.6 GHz MULTI BANK PAGE BURST LPDDR4 DRAM terminal pitch-max COMMON 16,32 1 1 128000000 134.2177 M SYNCHRONOUS NO 16,32 1.95 V 1.7 V CMOS INDUSTRIAL R-PBGA-B200 95 °C -40 °C 200 PLASTIC/EPOXY VFBGA BGA200,12X22,32/25 RECTANGULAR GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 850 µm 14.5 mm 10 mm INTEGRATED SILICON SOLUTION INC VFBGA, compliant EAR99 8542.32.00.36 Integrated Silicon Solution Inc.
MTA36ASF4G72PZ-3G2E7
Micron Technology Inc
$1.0000 Yes Obsolete 309.2376 Gbit 72 4GX72 1.2 V 1.612 GHz DUAL BANK PAGE BURST DDR4 DRAM MODULE AUTO/SELF REFRESH; WD-MAX COMMON 8 1 1 4000000000 4.295 G SYNCHRONOUS OPEN-DRAIN YES 8 792 mA 4.536 mA 1.26 V 1.14 V CMOS OTHER R-XDMA-N288 95 °C 288 UNSPECIFIED DIMM DIMM288,33 RECTANGULAR MICROELECTRONIC ASSEMBLY NO NO LEAD DUAL 31.55 mm 133.35 mm 3.9 mm MICRON TECHNOLOGY INC RDIMM-288 unknown
IS45S16100H-7BLA2-TR
Integrated Silicon Solution Inc
$1.0060 Yes Active 16.7772 Mbit 16 1MX16 3.3 V 5.5 ns DUAL BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 1000000 1.0486 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL R-PBGA-B60 105 °C -40 °C NOT SPECIFIED NOT SPECIFIED 60 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 650 µm BOTTOM 1.2 mm 10.1 mm 6.4 mm INTEGRATED SILICON SOLUTION INC TFBGA, compliant EAR99 8542.32.00.02 Integrated Silicon Solution Inc.
IS43LR16400C-6BLI-TR
Integrated Silicon Solution Inc
$1.0403 Yes Yes Active 67.1089 Mbit 16 4MX16 1.8 V 5.5 ns FOUR BANK PAGE BURST DDR1 DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 1.95 V 1.7 V CMOS INDUSTRIAL R-PBGA-B60 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 60 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.1 mm 10 mm 8 mm INTEGRATED SILICON SOLUTION INC TFBGA, compliant EAR99 8542.32.00.02
IS42S16100H-7BLI
Integrated Silicon Solution Inc
$1.0827 Yes Active 16.7772 Mbit 16 1MX16 3.3 V 5.5 ns 143 MHz 2048 DUAL BANK PAGE BURST SYNCHRONOUS DRAM PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 1000000 1.0486 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 3.5 mA 70 µA 3.6 V 3 V CMOS INDUSTRIAL R-PBGA-B60 Not Qualified 85 °C -40 °C 60 PLASTIC/EPOXY TFBGA BGA60,7X15,25 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 650 µm BOTTOM 1.2 mm 10.1 mm 6.4 mm INTEGRATED SILICON SOLUTION INC TFBGA, BGA60,7X15,25 compliant EAR99 8542.32.00.02 Integrated Silicon Solution Inc.
W9816G6JH-6
Winbond Electronics Corp
$1.1000 Yes Not Recommended 16.7772 Mbit 16 1MX16 3.3 V 5 ns DUAL BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 1000000 1.0486 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G50 70 °C NOT SPECIFIED NOT SPECIFIED 50 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 20.95 mm 10.16 mm WINBOND ELECTRONICS CORP TSOP2, compliant EAR99 8542.32.00.02 Winbond
W9816G6IH-6I
Winbond Electronics Corp
$1.1293 Yes Obsolete 16.7772 Mbit 16 1MX16 3.3 V 5 ns 166 MHz 4096 DUAL BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 1000000 1.0486 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 110 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G50 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 50 PLASTIC/EPOXY TSOP2 TSOP50,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 20.95 mm 10.16 mm WINBOND ELECTRONICS CORP TSOP2, TSOP50,.46,32 compliant EAR99 8542.32.00.02 TSOP2 50
W9816G6JH-6I
Winbond Electronics Corp
$1.1487 Yes Not Recommended 16.7772 Mbit 16 1MX16 3.3 V 5 ns DUAL BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 1000000 1.0486 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G50 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 50 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 20.95 mm 10.16 mm WINBOND ELECTRONICS CORP TSOP2-50 compliant EAR99 8542.32.00.02 Winbond
MT41K256M8DA-107:K
Micron Technology Inc
$1.1695 Yes Active 2.1475 Gbit 8 256MX8 1.35 V 195 ps 933 MHz 8192 MULTI BANK PAGE BURST DDR3L DRAM AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY COMMON 8 1 1 256000000 268.4355 M SYNCHRONOUS 3-STATE YES 8 12 mA 164 µA 1.45 V 1.283 V CMOS OTHER R-PBGA-B78 Not Qualified e1 3 85 °C 260 30 78 PLASTIC/EPOXY TFBGA BGA78,9X13,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 10.5 mm 8 mm MICRON TECHNOLOGY INC TFBGA, BGA78,9X13,32 not_compliant EAR99 8542.32.00.36 Micron