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51 - 60 of 266,973 results
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MT4KTF25664HZ-1G9P1
Micron Technology Inc
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$1.0000 | Yes | Active | 17.1799 Gbit | 64 | 256MX64 | 1.35 V | SINGLE BANK PAGE BURST | DDR3L DRAM MODULE | AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | YES | 1.45 V | 1.283 V | CMOS | COMMERCIAL | R-XZMA-N204 | 70 °C | 260 | 30 | 204 | UNSPECIFIED | DIMM | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | NO LEAD | 600 µm | ZIG-ZAG | 30.15 mm | 67.6 mm | 3.8 mm | MICRON TECHNOLOGY INC | DIMM, | compliant | EAR99 | 8542.32.00.36 | Micron | ||||||||||||||||||||
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IS43LQ16128A-062BLI
Integrated Silicon Solution Inc
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$1.0000 | Yes | Active | 2.1475 Gbit | 16 | 128MX16 | 1.6 GHz | MULTI BANK PAGE BURST | LPDDR4 DRAM | terminal pitch-max | COMMON | 16,32 | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | NO | 16,32 | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B200 | 95 °C | -40 °C | 200 | PLASTIC/EPOXY | VFBGA | BGA200,12X22,32/25 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 850 µm | 14.5 mm | 10 mm | INTEGRATED SILICON SOLUTION INC | VFBGA, | compliant | EAR99 | 8542.32.00.36 | Integrated Silicon Solution Inc. | |||||||||||||||||
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MTA36ASF4G72PZ-3G2E7
Micron Technology Inc
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$1.0000 | Yes | Obsolete | 309.2376 Gbit | 72 | 4GX72 | 1.2 V | 1.612 GHz | DUAL BANK PAGE BURST | DDR4 DRAM MODULE | AUTO/SELF REFRESH; WD-MAX | COMMON | 8 | 1 | 1 | 4000000000 | 4.295 G | SYNCHRONOUS | OPEN-DRAIN | YES | 8 | 792 mA | 4.536 mA | 1.26 V | 1.14 V | CMOS | OTHER | R-XDMA-N288 | 95 °C | 288 | UNSPECIFIED | DIMM | DIMM288,33 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | NO LEAD | DUAL | 31.55 mm | 133.35 mm | 3.9 mm | MICRON TECHNOLOGY INC | RDIMM-288 | unknown | ||||||||||||||||||
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IS45S16100H-7BLA2-TR
Integrated Silicon Solution Inc
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$1.0060 | Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5.5 ns | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PBGA-B60 | 105 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 60 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 650 µm | BOTTOM | 1.2 mm | 10.1 mm | 6.4 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | ||||||||||||||||||
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IS43LR16400C-6BLI-TR
Integrated Silicon Solution Inc
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$1.0403 | Yes | Yes | Active | 67.1089 Mbit | 16 | 4MX16 | 1.8 V | 5.5 ns | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B60 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 60 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.1 mm | 10 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, | compliant | EAR99 | 8542.32.00.02 | ||||||||||||||||||
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IS42S16100H-7BLI
Integrated Silicon Solution Inc
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$1.0827 | Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5.5 ns | 143 MHz | 2048 | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 3.5 mA | 70 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PBGA-B60 | Not Qualified | 85 °C | -40 °C | 60 | PLASTIC/EPOXY | TFBGA | BGA60,7X15,25 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 650 µm | BOTTOM | 1.2 mm | 10.1 mm | 6.4 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, BGA60,7X15,25 | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | ||||||||||
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W9816G6JH-6
Winbond Electronics Corp
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$1.1000 | Yes | Not Recommended | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5 ns | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G50 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 50 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 20.95 mm | 10.16 mm | WINBOND ELECTRONICS CORP | TSOP2, | compliant | EAR99 | 8542.32.00.02 | Winbond | |||||||||||||||||||
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W9816G6IH-6I
Winbond Electronics Corp
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$1.1293 | Yes | Obsolete | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5 ns | 166 MHz | 4096 | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2 mA | 110 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G50 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 50 | PLASTIC/EPOXY | TSOP2 | TSOP50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 20.95 mm | 10.16 mm | WINBOND ELECTRONICS CORP | TSOP2, TSOP50,.46,32 | compliant | EAR99 | 8542.32.00.02 | TSOP2 | 50 | |||||||
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W9816G6JH-6I
Winbond Electronics Corp
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$1.1487 | Yes | Not Recommended | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5 ns | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G50 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 50 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 20.95 mm | 10.16 mm | WINBOND ELECTRONICS CORP | TSOP2-50 | compliant | EAR99 | 8542.32.00.02 | Winbond | ||||||||||||||||||
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MT41K256M8DA-107:K
Micron Technology Inc
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$1.1695 | Yes | Active | 2.1475 Gbit | 8 | 256MX8 | 1.35 V | 195 ps | 933 MHz | 8192 | MULTI BANK PAGE BURST | DDR3L DRAM | AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | COMMON | 8 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 8 | 12 mA | 164 µA | 1.45 V | 1.283 V | CMOS | OTHER | R-PBGA-B78 | Not Qualified | e1 | 3 | 85 °C | 260 | 30 | 78 | PLASTIC/EPOXY | TFBGA | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 10.5 mm | 8 mm | MICRON TECHNOLOGY INC | TFBGA, BGA78,9X13,32 | not_compliant | EAR99 | 8542.32.00.36 | Micron |