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MCM4L4100N70R2
Motorola Semiconductor Products
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Check for Price | No | Obsolete | 4.1943 Mbit | 1 | 4MX1 | 5 V | 70 ns | 1024 | FAST PAGE DRAM | SEPARATE | 4000000 | 4.1943 M | 3-STATE | NO | 200 µA | 100 µA | CMOS | COMMERCIAL | R-PDSO-J20 | Not Qualified | e0 | 70 °C | 20 | PLASTIC/EPOXY | SOJ | SOJ20/26,.34 | RECTANGULAR | SMALL OUTLINE | YES | Tin/Lead (Sn/Pb) | J BEND | 1.27 mm | DUAL | MOTOROLA INC | unknown | EAR99 | 8542.32.00.02 | |||||||||||||||||||
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HY51V16100BSLR-80
SK Hynix Inc
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Check for Price | No | No | Obsolete | 16.7772 Mbit | 1 | 16MX1 | 3.3 V | 80 ns | 4096 | FAST PAGE | FAST PAGE DRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH | SEPARATE | 1 | 1 | 16000000 | 16.7772 M | ASYNCHRONOUS | 3-STATE | YES | YES | 200 µA | 70 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G24 | Not Qualified | e0 | 70 °C | 24 | PLASTIC/EPOXY | TSOP2-R | TSOP24/26,.36 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN LEAD | GULL WING | 1.27 mm | DUAL | 1.2 mm | 17.14 mm | 7.62 mm | SK HYNIX INC | compliant | EAR99 | 8542.32.00.02 | TSOP2 | TSOP2-R, TSOP24/26,.36 | 26 | ||||
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MCM51L100AJC80
Freescale Semiconductor
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Check for Price | No | Obsolete | 1.0486 Mbit | 1 | 1MX1 | 5 V | 5 V | 80 ns | 512 | FAST PAGE DRAM | SEPARATE | 1000000 | 1.0486 M | 3-STATE | 400 µA | 75 µA | CMOS | INDUSTRIAL | R-PDSO-J20 | Not Qualified | e0 | 85 °C | -40 °C | 20 | PLASTIC/EPOXY | SOJ | SOJ20/26,.34 | RECTANGULAR | SMALL OUTLINE | YES | Tin/Lead (Sn/Pb) | J BEND | 1.27 mm | DUAL | MOTOROLA SEMICONDUCTOR PRODUCTS | unknown | SOJ, SOJ20/26,.34 | |||||||||||||||||||
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TC514102AP-60
Toshiba America Electronic Components
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Check for Price | No | No | Obsolete | 4.1943 Mbit | 1 | 4MX1 | 5 V | 60 ns | 1024 | STATIC COLUMN | STATIC COLUMN DRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 1 | 1 | 4000000 | 4.1943 M | ASYNCHRONOUS | 3-STATE | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDIP-T18 | Not Qualified | e0 | 70 °C | 18 | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.4 mm | 22 mm | 7.62 mm | TOSHIBA CORP | unknown | EAR99 | 8542.32.00.02 | DIP | DIP, | 18 | ||||||||||
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UPD4217100G5-80
NEC Electronics America Inc
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Check for Price | Obsolete | 16.7772 Mbit | 1 | 16MX1 | 5 V | 80 ns | 2048 | FAST PAGE | FAST PAGE DRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 1 | 1 | 16000000 | 16.7772 M | ASYNCHRONOUS | 3-STATE | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-G24 | Not Qualified | 70 °C | 24 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 1.27 mm | DUAL | 1.1 mm | 10.16 mm | NEC ELECTRONICS AMERICA INC | unknown | 0.400 INCH, PLASTIC, TSOP2-28/24 | |||||||||||||||||||
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MDM11000VM-12
Mosaic Semiconductor Inc
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Check for Price | Obsolete | 1.0486 Mbit | 1 | 1MX1 | 5 V | 120 ns | 512 | FAST PAGE | FAST PAGE DRAM | RAS/CBR/HIDDEN REFRESH | 1 | 1 | 1000000 | 1.0486 M | ASYNCHRONOUS | 5.5 V | 4.5 V | CMOS | MILITARY | R-CDXA-T18 | Not Qualified | 125 °C | -55 °C | 18 | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | VERTICAL IN-LINE | NO | THROUGH-HOLE | DUAL | MOSAIC SEMICONDUCTOR INC | unknown | EAR99 | 8542.32.00.02 | , | |||||||||||||||||||||
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MT4C1004JZ-6L
Micron Technology Inc
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Check for Price | No | No | Obsolete | 4.1943 Mbit | 1 | 4MX1 | 5 V | 60 ns | 1024 | FAST PAGE | FAST PAGE DRAM | RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH | SEPARATE | 1 | 1 | 4000000 | 4.1943 M | ASYNCHRONOUS | 3-STATE | NO | 200 µA | 110 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PZIP-T20 | Not Qualified | e0 | 70 °C | 20 | PLASTIC/EPOXY | ZIP | ZIP20,.1 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 1.27 mm | ZIG-ZAG | 10.41 mm | 25.295 mm | 2.795 mm | MICRON TECHNOLOGY INC | not_compliant | EAR99 | 8542.32.00.02 | ZIP | 0.400 INCH, PLASTIC, ZIP-20 | 20 | |||||
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GM71C4100ALT-60
Goldstar Electron Co Ltd
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Check for Price | Obsolete | 4.1943 Mbit | 1 | 4MX1 | 5 V | 60 ns | 1024 | FAST PAGE | FAST PAGE DRAM | RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH | 1 | 1 | 4000000 | 4.1943 M | ASYNCHRONOUS | 3-STATE | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-G20 | Not Qualified | 70 °C | 20 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | YES | GULL WING | DUAL | GOLDSTAR ELECTRON CO LTD | unknown | ||||||||||||||||||||||||
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KM41C4001AP-10
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 4.1943 Mbit | 1 | 4MX1 | 5 V | 100 ns | 1024 | NIBBLE | NIBBLE MODE DRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | SEPARATE | 1 | 1 | 4000000 | 4.1943 M | ASYNCHRONOUS | 3-STATE | 1 mA | 85 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDIP-T18 | Not Qualified | e0 | 70 °C | 18 | PLASTIC/EPOXY | DIP | DIP18,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.65 mm | 22.02 mm | 7.62 mm | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | 8542.32.00.02 | DIP | DIP, DIP18,.3 | 18 | ||||||
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TC511000JL-85
Toshiba America Electronic Components
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Check for Price | No | Obsolete | 1.0486 Mbit | 1 | 1MX1 | 5 V | 85 ns | 512 | FAST PAGE DRAM | SEPARATE | 1000000 | 1.0486 M | 3-STATE | 300 µA | 70 µA | CMOS | COMMERCIAL | R-PDSO-J20 | Not Qualified | e0 | 70 °C | 20 | PLASTIC/EPOXY | SOJ | SOJ20/26,.34 | RECTANGULAR | SMALL OUTLINE | YES | Tin/Lead (Sn/Pb) | J BEND | 1.27 mm | DUAL | TOSHIBA CORP | unknown | EAR99 | 8542.32.00.02 | SOJ, SOJ20/26,.34 |