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K7R323684M-FC20
Samsung Semiconductor
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Check for Price | No | Obsolete | 37.7487 Mbit | 36 | 1MX36 | 1.8 V | 450 ps | 200 MHz | QDR SRAM | PIPELINED ARCHITECTURE | SEPARATE | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 300 mA | 1.7 V | 700 µA | 1.9 V | 1.7 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | e0 | 3 | 70 °C | 240 | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.4 mm | 17 mm | 15 mm | SAMSUNG SEMICONDUCTOR INC | BGA | 15 X 17 MM, 1 MM PITCH, FBGA-165 | 165 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | ||
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K7R323684M-FC200
Samsung Semiconductor
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Check for Price | Obsolete | 37.7487 Mbit | 36 | 1MX36 | 1.8 V | 450 ps | QDR SRAM | PIPELINED ARCHITECTURE | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | PARALLEL | 1.9 V | 1.7 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | 70 °C | 165 | PLASTIC/EPOXY | LBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | BALL | 1 mm | BOTTOM | 1.4 mm | 17 mm | 15 mm | SAMSUNG SEMICONDUCTOR INC | BGA | LBGA, | 165 | unknown | 3A991.B.2.A | 8542.32.00.41 |