Findchips: Parametric Search Results for MV831

Parametric results for: MV831 under Varactors

Select parts from the table below to compare.

Compare


Select Parts		Part Number

		MV831BCHIP Msi Electronics Inc
		MV831CCHIP Msi Electronics Inc
		MV831C API Technologies Corp
		MV831 Msi Electronics Inc
		MV831CHIP Msi Electronics Inc
		MV831C Msi Electronics Inc
		MV831BCHIP API Technologies Corp
		MV831CCHIP API Technologies Corp
		MV831B Msi Electronics Inc
		MV831B API Technologies Corp

		Most Relevant										Technical						Compliance			Operating Conditions	Physical							Other
Composite Price	Part Life Cycle Code	Diode Capacitance-Nom	Reverse Current-Max	Power Dissipation-Max	Diode Element Material	Breakdown Voltage-Min	Diode Type	Configuration	Surface Mount	Rep Pk Reverse Voltage-Max	Number of Elements	Diode Cap Tolerance	Diode Capacitance Ratio-Min	Frequency Band	Quality Factor-Min	Reverse Test Voltage	Variable Capacitance Diode Classification	Qualification Status	JESD-30 Code	JEDEC-95 Code	Operating Temperature-Max	Case Connection	Number of Terminals	Package Body Material	Package Shape	Package Style	Terminal Form	Terminal Position	Ihs Manufacturer	Package Description	Reach Compliance Code	ECCN Code	HTS Code	Part Package Code

Check for Price

Obsolete

18 pF

0.2 pA

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

YES

30 V

5 %

1.8

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

25 V

ABRUPT

Not Qualified

X-XUUC-N

175 °C

UNSPECIFIED

UNCASED CHIP

NO LEAD

UPPER

MSI ELECTRONICS INC

X-XUUC-N

unknown

EAR99

8541.10.00.40

Check for Price

Obsolete

18 pF

0.2 pA

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

YES

30 V

2 %

1.8

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

25 V

ABRUPT

Not Qualified

X-XUUC-N

175 °C

UNSPECIFIED

UNCASED CHIP

NO LEAD

UPPER

MSI ELECTRONICS INC

X-XUUC-N

unknown

EAR99

8541.10.00.40

Check for Price

Obsolete

18 pF

200 nA

400 mW

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

30 V

2 %

1.8

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

25 V

ABRUPT

Not Qualified

O-LALF-W2

DO-7

175 °C

ISOLATED

GLASS

ROUND

LONG FORM

WIRE

AXIAL

API TECHNOLOGIES CORP

O-LALF-W2

compliant

EAR99

8541.10.00.80

Check for Price

Obsolete

18 pF

0.2 pA

400 mW

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

30 V

10 %

1.8

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

25 V

ABRUPT

Not Qualified

O-LALF-W2

175 °C

ISOLATED

GLASS

ROUND

LONG FORM

WIRE

AXIAL

MSI ELECTRONICS INC

O-LALF-W2

unknown

EAR99

8541.10.00.80

Check for Price

Obsolete

18 pF

0.2 pA

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

YES

30 V

10 %

1.8

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

25 V

ABRUPT

Not Qualified

X-XUUC-N

175 °C

UNSPECIFIED

UNCASED CHIP

NO LEAD

UPPER

MSI ELECTRONICS INC

X-XUUC-N

unknown

EAR99

8541.10.00.40

Check for Price

Obsolete

18 pF

0.2 pA

400 mW

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

30 V

2 %

1.8

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

25 V

ABRUPT

Not Qualified

O-LALF-W2

175 °C

ISOLATED

GLASS

ROUND

LONG FORM

WIRE

AXIAL

MSI ELECTRONICS INC

O-LALF-W2

unknown

EAR99

8541.10.00.80

Check for Price

Obsolete

18 pF

200 nA

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

YES

30 V

5 %

1.8

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

25 V

ABRUPT

Not Qualified

X-XUUC-N

175 °C

UNSPECIFIED

UNCASED CHIP

NO LEAD

UPPER

API TECHNOLOGIES CORP

X-XUUC-N

compliant

EAR99

8541.10.00.40

DIE

Check for Price

Obsolete

18 pF

200 nA

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

YES

30 V

2 %

1.8

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

25 V

ABRUPT

Not Qualified

X-XUUC-N

175 °C

UNSPECIFIED

UNCASED CHIP

NO LEAD

UPPER

API TECHNOLOGIES CORP

X-XUUC-N

compliant

EAR99

8541.10.00.40

DIE

Check for Price

Obsolete

18 pF

0.2 pA

400 mW

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

30 V

5 %

1.8

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

25 V

ABRUPT

Not Qualified

O-LALF-W2

175 °C

ISOLATED

GLASS

ROUND

LONG FORM

WIRE

AXIAL

MSI ELECTRONICS INC

O-LALF-W2

unknown

EAR99

8541.10.00.80

Check for Price

Obsolete

18 pF

200 nA

400 mW

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

30 V

5 %

1.8

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

25 V

ABRUPT

Not Qualified

O-LALF-W2

DO-7

175 °C

ISOLATED

GLASS

ROUND

LONG FORM

WIRE

AXIAL

API TECHNOLOGIES CORP

O-LALF-W2

compliant

EAR99

8541.10.00.80

1 2 3 4 5 Next

Compare

MV831BCHIP

Msi Electronics Inc

Check for Price

Obsolete

18 pF

0.2 pA

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

YES

30 V

5 %

1.8

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

25 V

ABRUPT

Not Qualified

X-XUUC-N

175 °C

UNSPECIFIED

UNCASED CHIP

NO LEAD

UPPER

MSI ELECTRONICS INC

X-XUUC-N

unknown

EAR99

8541.10.00.40

MV831CCHIP

Msi Electronics Inc

Check for Price

Obsolete

18 pF

0.2 pA

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

YES

30 V

2 %

1.8

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

25 V

ABRUPT

Not Qualified

X-XUUC-N

175 °C

UNSPECIFIED

UNCASED CHIP

NO LEAD

UPPER

MSI ELECTRONICS INC

X-XUUC-N

unknown

EAR99

8541.10.00.40

MV831C

API Technologies Corp

Check for Price

Obsolete

18 pF

200 nA

400 mW

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

30 V

2 %

1.8

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

25 V

ABRUPT

Not Qualified

O-LALF-W2

DO-7

175 °C

ISOLATED

GLASS

ROUND

LONG FORM

WIRE

AXIAL

API TECHNOLOGIES CORP

O-LALF-W2

compliant

EAR99

8541.10.00.80

MV831

Msi Electronics Inc

Check for Price

Obsolete

18 pF

0.2 pA

400 mW

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

30 V

10 %

1.8

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

25 V

ABRUPT

Not Qualified

O-LALF-W2

175 °C

ISOLATED

GLASS

ROUND

LONG FORM

WIRE

AXIAL

MSI ELECTRONICS INC

O-LALF-W2

unknown

EAR99

8541.10.00.80

MV831CHIP

Msi Electronics Inc

Check for Price

Obsolete

18 pF

0.2 pA

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

YES

30 V

10 %

1.8

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

25 V

ABRUPT

Not Qualified

X-XUUC-N

175 °C

UNSPECIFIED

UNCASED CHIP

NO LEAD

UPPER

MSI ELECTRONICS INC

X-XUUC-N

unknown

EAR99

8541.10.00.40

MV831C

Msi Electronics Inc

Check for Price

Obsolete

18 pF

0.2 pA

400 mW

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

30 V

2 %

1.8

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

25 V

ABRUPT

Not Qualified

O-LALF-W2

175 °C

ISOLATED

GLASS

ROUND

LONG FORM

WIRE

AXIAL

MSI ELECTRONICS INC

O-LALF-W2

unknown

EAR99

8541.10.00.80

MV831BCHIP

API Technologies Corp

Check for Price

Obsolete

18 pF

200 nA

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

YES

30 V

5 %

1.8

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

25 V

ABRUPT

Not Qualified

X-XUUC-N

175 °C

UNSPECIFIED

UNCASED CHIP

NO LEAD

UPPER

API TECHNOLOGIES CORP

X-XUUC-N

compliant

EAR99

8541.10.00.40

DIE

MV831CCHIP

API Technologies Corp

Check for Price

Obsolete

18 pF

200 nA

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

YES

30 V

2 %

1.8

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

25 V

ABRUPT

Not Qualified

X-XUUC-N

175 °C

UNSPECIFIED

UNCASED CHIP

NO LEAD

UPPER

API TECHNOLOGIES CORP

X-XUUC-N

compliant

EAR99

8541.10.00.40

DIE

MV831B

Msi Electronics Inc

Check for Price

Obsolete

18 pF

0.2 pA

400 mW

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

30 V

5 %

1.8

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

25 V

ABRUPT

Not Qualified

O-LALF-W2

175 °C

ISOLATED

GLASS

ROUND

LONG FORM

WIRE

AXIAL

MSI ELECTRONICS INC

O-LALF-W2

unknown

EAR99

8541.10.00.80

MV831B

API Technologies Corp

Check for Price

Obsolete

18 pF

200 nA

400 mW

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

30 V

5 %

1.8

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

25 V

ABRUPT

Not Qualified

O-LALF-W2

DO-7

175 °C

ISOLATED

GLASS

ROUND

LONG FORM

WIRE

AXIAL

API TECHNOLOGIES CORP

O-LALF-W2

compliant

EAR99

8541.10.00.80

1 2 3 4 5 Next