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MV831BCHIP
Msi Electronics Inc
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Check for Price | Obsolete | 18 pF | 0.2 pA | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 30 V | 1 | 5 % | 1.8 | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 25 | 25 V | ABRUPT | Not Qualified | X-XUUC-N | 175 °C | UNSPECIFIED | UNSPECIFIED | UNCASED CHIP | NO LEAD | UPPER | MSI ELECTRONICS INC | X-XUUC-N | unknown | EAR99 | 8541.10.00.40 | |||||||
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MV831CCHIP
Msi Electronics Inc
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Check for Price | Obsolete | 18 pF | 0.2 pA | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 30 V | 1 | 2 % | 1.8 | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 25 | 25 V | ABRUPT | Not Qualified | X-XUUC-N | 175 °C | UNSPECIFIED | UNSPECIFIED | UNCASED CHIP | NO LEAD | UPPER | MSI ELECTRONICS INC | X-XUUC-N | unknown | EAR99 | 8541.10.00.40 | |||||||
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MV831C
API Technologies Corp
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Check for Price | Obsolete | 18 pF | 200 nA | 400 mW | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 30 V | 1 | 2 % | 1.8 | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 25 | 25 V | ABRUPT | Not Qualified | O-LALF-W2 | DO-7 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | API TECHNOLOGIES CORP | O-LALF-W2 | compliant | EAR99 | 8541.10.00.80 | |||
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MV831
Msi Electronics Inc
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Check for Price | Obsolete | 18 pF | 0.2 pA | 400 mW | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 30 V | 1 | 10 % | 1.8 | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 25 | 25 V | ABRUPT | Not Qualified | O-LALF-W2 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MSI ELECTRONICS INC | O-LALF-W2 | unknown | EAR99 | 8541.10.00.80 | ||||
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MV831CHIP
Msi Electronics Inc
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Check for Price | Obsolete | 18 pF | 0.2 pA | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 30 V | 1 | 10 % | 1.8 | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 25 | 25 V | ABRUPT | Not Qualified | X-XUUC-N | 175 °C | UNSPECIFIED | UNSPECIFIED | UNCASED CHIP | NO LEAD | UPPER | MSI ELECTRONICS INC | X-XUUC-N | unknown | EAR99 | 8541.10.00.40 | |||||||
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MV831C
Msi Electronics Inc
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Check for Price | Obsolete | 18 pF | 0.2 pA | 400 mW | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 30 V | 1 | 2 % | 1.8 | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 25 | 25 V | ABRUPT | Not Qualified | O-LALF-W2 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MSI ELECTRONICS INC | O-LALF-W2 | unknown | EAR99 | 8541.10.00.80 | ||||
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MV831BCHIP
API Technologies Corp
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Check for Price | Obsolete | 18 pF | 200 nA | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 30 V | 1 | 5 % | 1.8 | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 25 | 25 V | ABRUPT | Not Qualified | X-XUUC-N | 175 °C | UNSPECIFIED | UNSPECIFIED | UNCASED CHIP | NO LEAD | UPPER | API TECHNOLOGIES CORP | X-XUUC-N | compliant | EAR99 | 8541.10.00.40 | DIE | ||||||
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MV831CCHIP
API Technologies Corp
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Check for Price | Obsolete | 18 pF | 200 nA | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 30 V | 1 | 2 % | 1.8 | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 25 | 25 V | ABRUPT | Not Qualified | X-XUUC-N | 175 °C | UNSPECIFIED | UNSPECIFIED | UNCASED CHIP | NO LEAD | UPPER | API TECHNOLOGIES CORP | X-XUUC-N | compliant | EAR99 | 8541.10.00.40 | DIE | ||||||
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MV831B
Msi Electronics Inc
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Check for Price | Obsolete | 18 pF | 0.2 pA | 400 mW | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 30 V | 1 | 5 % | 1.8 | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 25 | 25 V | ABRUPT | Not Qualified | O-LALF-W2 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MSI ELECTRONICS INC | O-LALF-W2 | unknown | EAR99 | 8541.10.00.80 | ||||
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MV831B
API Technologies Corp
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Check for Price | Obsolete | 18 pF | 200 nA | 400 mW | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 30 V | 1 | 5 % | 1.8 | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 25 | 25 V | ABRUPT | Not Qualified | O-LALF-W2 | DO-7 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | API TECHNOLOGIES CORP | O-LALF-W2 | compliant | EAR99 | 8541.10.00.80 |