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SSM3J331R,LF(T
Toshiba America Electronic Components
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$0.0145 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 4 A | 75 mΩ | 60 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | 10 A | SWITCHING | SILICON | R-PDSO-F3 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | DUAL | SOT-23F, 3 PIN | EAR99 | |||||||||||||||||||||||
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NX138AKR
Nexperia
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$0.0284 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 190 mA | 4.5 Ω | 1.5 pF | TRENCH MOSFET | ENHANCEMENT MODE | 1.33 W | 765 mA | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | IEC-60134 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | SOT-23, 3 PIN | EAR99 | TO-236 | 3 | SOT23 | ||||||||||||
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NX138AKVL
Nexperia
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$0.0319 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 190 mA | 4.5 Ω | 1.5 pF | TRENCH MOSFET | ENHANCEMENT MODE | 1.33 W | 765 mA | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | IEC-60134 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | SOT-23, 3 PIN | EAR99 | TO-236 | 3 | SOT23 | ||||||||||||
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SIL260N03UK-TP
Micro Commercial Components
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$0.0348 | Yes | Active | 30 V | 1.51 A | 260 mΩ | e3 | 1 | 260 | 10 | Matte Tin (Sn) | EAR99 | TR | |||||||||||||||||||||||||||||||||||||
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MMFTP3160
Diotec Semiconductor AG
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$0.0383 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 2.6 A | 90 mΩ | 40 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.4 W | 1.4 W | 20 A | SWITCHING | SILICON | 12.4 ns | 20.6 ns | TO-236 | R-PDSO-G3 | e3 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | SOT-23, 3 PIN | EAR99 | 8541.29.00.95 | |||||||||||||
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DMP3099L-7
Diodes Incorporated
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$0.0399 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 3.8 A | 65 mΩ | HIGH RELIABILITY | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.08 W | 11 A | SWITCHING | SILICON | R-PDSO-G3 | e3 | AEC-Q101 | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | EAR99 | 3 | TR | ||||||||||||||||
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PMZ200UNEYL
Nexperia
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$0.0430 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 1.4 A | 250 mΩ | 9 pF | TRENCH MOSFET | ENHANCEMENT MODE | 6.25 W | 5 A | SWITCHING | SILICON | R-PBCC-N3 | e3 | IEC-60134 | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | CHIP CARRIER | Tin (Sn) | NO LEAD | BOTTOM | SOT-883, DFN1006-3, 3 PIN | EAR99 | DFN | 3 | SOT883 | ||||||||||||
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YJL02N10A
Yangzhou Yangjie Electronics Co Ltd
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$0.0434 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 2 A | 310 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.3 W | 8 A | SWITCHING | SILICON | R-PDSO-G3 | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | EAR99 | 8541.29.00.95 | |||||||||||||||||||||||
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IRFR430ATRPBF
Vishay Intertechnologies
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$0.0443 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 500 V | 1 | 5 A | 1.7 Ω | 130 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 110 W | 20 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | EAR99 | TO-252AA | 3 | |||||||||||||||
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SI2122DS-T1-GE3
Vishay Intertechnologies
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$0.0465 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 2.17 A | 160 mΩ | 0.45 mJ | 6.2 pF | TRENCH MOSFET | ENHANCEMENT MODE | 1.6 W | 8 A | SWITCHING | SILICON | 26 ns | 24 ns | TO-236 | R-PDSO-G3 | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | SOT-23, 3 PIN | EAR99 |