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61 - 70 of 19,592 results
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MMBFJ270
onsemi
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$0.2425 | Yes | Active | P-CHANNEL | YES | SINGLE | 3 | 1 | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 225 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | ONSEMI | SOT-23, 3 PIN | 318-08 | compliant | EAR99 | 8541.21.00.95 | onsemi | |||||||||||||||
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2SK209-BL(TE85L,F)
Toshiba America Electronic Components
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$0.2511 | Yes | Active | N-CHANNEL | YES | SINGLE | 3 | 1 | LOW NOISE | 3 pF | JUNCTION | DEPLETION MODE | 150 mW | 150 mW | AMPLIFIER | SILICON | TO-236 | R-PDSO-G3 | 125 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | TOSHIBA CORP | S-MINI, 2-3F1B, SC-59, 3 PIN | unknown | EAR99 | 8541.21.00.95 | Toshiba | |||||||||||||||||
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VN10LFTA
Diodes Incorporated
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$0.2519 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE | 3 | 60 V | 1 | 150 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 250 mW | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIODES INC | compliant | EAR99 | Diodes Incorporated | |||||||||||||||
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2SK209-GR(TE85L,F)
Toshiba America Electronic Components
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$0.2565 | Yes | Active | N-CHANNEL | YES | SINGLE | 3 | 1 | LOW NOISE | 3 pF | JUNCTION | DEPLETION MODE | 150 mW | 150 mW | AMPLIFIER | SILICON | TO-236 | R-PDSO-G3 | 125 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | TOSHIBA CORP | S-MINI, 2-3F1B, SC-59, 3 PIN | unknown | EAR99 | 8541.21.00.95 | Toshiba | |||||||||||||||||
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MMBFJ110
onsemi
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$0.2601 | Yes | Active | N-CHANNEL | YES | SINGLE | 3 | 1 | 18 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 460 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | ONSEMI | SUPERSOT-3 | 527AG | compliant | EAR99 | onsemi | ||||||||||||||||
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BS170FTA
Diodes Incorporated
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$0.2718 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE | 3 | 60 V | 1 | 150 mA | 5 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 330 mW | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIODES INC | compliant | EAR99 | Diodes Incorporated | ||||||||||||||||
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MMBFJ176
onsemi
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$0.2722 | Yes | Active | P-CHANNEL | YES | SINGLE | 3 | 1 | 250 Ω | JUNCTION | DEPLETION MODE | 225 mW | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | ONSEMI | SOT-23, 3 PIN | 318-08 | compliant | EAR99 | onsemi | |||||||||||||||
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2SK880-BL(TE85L,F)
Toshiba America Electronic Components
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$0.2778 | Yes | Active | N-CHANNEL | YES | SINGLE | 3 | 1 | LOW NOISE | 3 pF | JUNCTION | DEPLETION MODE | 100 mW | 100 mW | AMPLIFIER | SILICON | R-PDSO-G3 | 125 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | TOSHIBA CORP | , | unknown | EAR99 | 8541.21.00.95 | Toshiba | ||||||||||||||||||
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NTTFS4C25NTAG
onsemi
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$0.2835 | Yes | End Of Life | N-CHANNEL | YES | SINGLE | 1 | 27 A | METAL-OXIDE SEMICONDUCTOR | 20.2 W | e3 | 1 | 150 °C | 260 | 30 | Matte Tin (Sn) - annealed | ONSEMI | 511AB | not_compliant | EAR99 | onsemi | WDFN8 3.3x3.3, 0.65P | 8 | ||||||||||||||||||||||||||
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ZVN3320FTA
Diodes Incorporated
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$0.2900 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE | 3 | 200 V | 1 | 60 mA | 25 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 330 mW | 330 mW | 1 A | SILICON | 12 ns | 12 ns | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIODES INC | compliant | EAR99 | 8541.21.00.95 | Diodes Incorporated |