Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Pulsed Drain Current-Max (IDM) Surface Mount Transition Frequency-Nom (fT)

AVALANCHE ENERGY RATED 4 AVALANCHE RATED 15 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY 1 BUILT-IN BIAS RESISTOR RATIO IS 0.47 1 BUILT-IN BIAS RESISTOR RATIO IS 2.14 1 BUILT-IN BIAS RESISTOR RATIO IS 4.7 1 CMOS COMPATIBLE 10 ESD PROTECTED 5 ESD PROTECTED, LOGIC LEVEL COMPATIBLE 2 ESD PROTECTED, LOW THERHOLD, LOGIC LEVEL COMPATIBLE 2 EUROPEAN PART NUMBER 7 FAST SWITCHING, LOW THRESHOLD 1 GATE PROTECTED 2 GATE PROTECTED, HIGH INPUT IMPEDANCE 2 HIGH INPUT IMPEDANCE 35 HIGH INPUT IMPEDANCE, LOW THRESHOLD 4 HIGH RELIABILITY 50 HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE 2 HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, LOW THRESHOLD 2 HIGH RELIABILITY, ULTRA-LOW RESISTANCE 2 HIGH RELIABLITY 1 LOGIC LEVEL COMPATIBLE 59 LOGIC LEVEL COMPATIBLE, AVALANCHE ENERGY RATED 1 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED 3 LOGIC LEVEL COMPATIBLE, ESD PROTECTED 2 LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE 5 LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD 6 LOGIC LEVEL COMPATIBLE, RADIATION HARDENED 3 LOW DRIFT 50 LOW INSERTION LOSS 24 LOW LEAKAGE CURRENT 2 LOW NOISE 171 LOW NOISE, LOW DRIFT 44 LOW NOISE, ULTRA HIGH INPUT IMPEDANCE 2 LOW THRESHOLD 39 LOW THRESHOLD, HIGH INPUT IMPEDANCE 13 LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE 1 LOW THRESHOLD, LOGIC LEVEL COMPATIBLE 4 LOW THRESHOLD, LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE 2 RADIATION HARDENED 3 ULTRA HIGH INPUT IMPEDANCE 8 VERY HIGH INPUT IMPEDANCE 3

3,282 hits Apply

0.07 mJ 1 0.58 mJ 1 9.0 mJ 2 22.0 mJ 1 57.0 mJ 2 63.0 mJ 1 75.0 mJ 1 100.0 mJ 1 150.0 mJ 4 200.0 mJ 1 210.0 mJ 2

Min (mJ) - Max (mJ)

3,282 hits Apply

DRAIN 182 DRAIN SOURCE 12 GATE 40 ISOLATED 51 SOURCE 3 SUBSTRATE 9

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Collector Current-Max (IC) (3)

100 mA 3 150 mA 1 3 A 1

Min (A) - Max (A)

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6 pF 3

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Collector-Emitter Voltage-Max (1)

50 V 3

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Configuration (27)

2 BANKS, COMMON SOURCE, 4 ELEMENTS 5 2 BANKS, COMMON SUBSTRATE, 2 ELEMENTS 3 COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE 10 COMMON DRAIN, 3 ELEMENTS WITH BUILT-IN DIODE 2 COMMON EMITTER, 2 ELEMENTS 3 COMMON GATE, 3 ELEMENTS WITH BUILT-IN RESISTOR 3 COMMON GATE, 4 ELEMENTS WITH BUILT-IN DIODE 6 COMMON SOURCE, 2 ELEMENTS 6 COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 2 COMMON SOURCE, 3 ELEMENTS WITH BUILT-IN DIODE 3 COMMON SOURCE, 4 ELEMENTS WITH BUILT-IN DIODE 2 COMMON SUBSTRATE, 2 ELEMENTS 10 COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE 1 COMPLEX 2 SEPARATE, 2 ELEMENTS 387 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 83 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 10 SEPARATE, 4 ELEMENTS 11 SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE 31 SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE 3 SERIES, 2 ELEMENTS WITH BUILT-IN DIODE 8 SERIES, 3 ELEMENTS 9 SINGLE 1,950 SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE 1 SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR 1 SINGLE WITH BUILT-IN DIODE 551 SINGLE WITH BUILT-IN DIODE AND RESISTOR 23

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DC Current Gain-Min (hFE) (4)

70.0 1 80.0 2 100.0 1 120.0 1

Min - Max

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DS Breakdown Voltage-Min (40)

6 V 1 8 V 7 10 V 12 10.6 V 4 12 V 25 13.5 V 2 15 V 6 16 V 6 16.5 V 3 18 V 1 20 V 154 24 V 1 25 V 38 28 V 2 30 V 212 35 V 27 40 V 188 43 V 1 45 V 3 50 V 110 55 V 4 60 V 243 80 V 8 90 V 14 100 V 88 120 V 2 150 V 28 160 V 2 180 V 3 200 V 48 220 V 3 240 V 16 250 V 12 300 V 1 350 V 15 400 V 12 450 V 1 500 V 19 600 V 6 900 V 2

Min (V) - Max (V)

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Drain Current-Max (ID) (50)

12 mA 4 20 mA 24 30 mA 9 50 mA 52 100 mA 34 115 mA 21 130 mA 9 150 mA 20 160 mA 5 170 mA 9 200 mA 42 250 mA 21 280 mA 32 300 mA 11 400 mA 18 500 mA 15 530 mA 15 750 mA 7 800 mA 17 860 mA 5 890 mA 5 900 mA 8 960 mA 5 1 A 57 1.1 A 9 1.2 A 12 1.3 A 8 1.5 A 17 1.6 A 19 1.7 A 5 2 A 20 2.2 A 10 2.34 A 7 2.5 A 16 2.7 A 7 2.9 A 8 3 A 17 3.5 A 6 4 A 15 5 A 6 5.3 A 6 5.5 A 10 6 A 9 6.5 A 9 7 A 12 7.5 A 5 8 A 12 10 A 7 11 A 5 37 A 18

Min (A) - Max (A)

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Drain-source On Resistance-Max (50)

30 mΩ 12 42 mΩ 18 85 mΩ 11 90 mΩ 15 100 mΩ 10 110 mΩ 9 250 mΩ 12 300 mΩ 8 500 mΩ 12 600 mΩ 20 800 mΩ 15 1 Ω 9 1.2 Ω 9 1.4 Ω 19 1.5 Ω 10 2 Ω 29 2.5 Ω 20 3 Ω 31 3.5 Ω 14 4 Ω 22 5 Ω 42 6 Ω 16 7.5 Ω 30 8 Ω 18 10 Ω 28 12 Ω 19 15 Ω 43 18 Ω 8 25 Ω 46 30 Ω 78 40 Ω 35 50 Ω 44 60 Ω 77 70 Ω 21 75 Ω 15 80 Ω 26 85 Ω 9 95 Ω 10 100 Ω 182 115 Ω 9 125 Ω 13 150 Ω 19 200 Ω 50 250 Ω 9 300 Ω 20 350 Ω 36 500 Ω 161 600 Ω 76 1 kΩ 19 2 kΩ 173

Min (Ω) - Max (Ω)

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HIGH ELECTRON MOBILITY 4 JUNCTION 2,164 METAL-OXIDE SEMICONDUCTOR 1,047

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0.1 pF 8 0.3 pF 4 0.5 pF 26 0.7 pF 11 0.8 pF 8 0.9 pF 160 1 pF 96 1.2 pF 53 1.3 pF 9 1.5 pF 276 1.8 pF 137 2 pF 98 2.5 pF 124 2.6 pF 2 3 pF 210 3.5 pF 95 3.6 pF 1 3.91 pF 1 4 pF 197 4.2 pF 1 5 pF 244 5.5 pF 8 6 pF 35 7 pF 31 8 pF 109 10 pF 30 11 pF 2 12 pF 13 15 pF 34 16 pF 4 17 pF 1 17.1 pF 1 18 pF 3 20 pF 27 22 pF 5 23 pF 2 25 pF 50 28 pF 3 30 pF 12 35 pF 9 40 pF 13 42 pF 2 49 pF 2 50 pF 4 60 pF 4 65 pF 3 85 pF 2 100 pF 3 135 pF 8 175 pF 2

Min (pF) - Max (pF)

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Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 1

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MO-036AB 18 MO-041BA 4 MO-187AA 1 MO-193AA 1 MS-012AA 23 TO-18 180 TO-205AD 14 TO-205AF 43 TO-206AA 63 TO-206AC 1 TO-206AF 6 TO-220AB 20 TO-226AA 16 TO-236 26 TO-236AA 1 TO-236AB 50 TO-252 3 TO-252AA 7 TO-254AA 2 TO-257AA 1 TO-261AA 15 TO-263AB 1 TO-39 25 TO-46 6 TO-5 12 TO-52 16 TO-71 156 TO-72 131 TO-78 68 TO-92 375 TO-99 9

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DIE-2 879 DIE-3 32 DIE-6 40 O-MBCY-W3 359 O-MBCY-W4 136 O-MBCY-W6 200 O-MBCY-W7 12 O-MBCY-W8 8 O-PBCY-T3 367 O-PBCY-W3 31 O-XBCY-W8 13 R-CDIP-T14 25 R-CDSO-N3 28 R-CDSO-N4 6 R-CDSO-N6 9 R-CQCC-N15 5 R-MSFM-P3 7 R-PDIP-T14 8 R-PDIP-T16 8 R-PDIP-T3 28 R-PDIP-T8 61 R-PDSO-F3 6 R-PDSO-F6 26 R-PDSO-F8 12 R-PDSO-G14 5 R-PDSO-G18 6 R-PDSO-G3 262 R-PDSO-G4 27 R-PDSO-G5 5 R-PDSO-G6 58 R-PDSO-G8 166 R-PDSO-N6 9 R-PDSO-N8 8 R-PSFM-T3 20 R-PSIP-T3 21 R-PSSO-F3 23 R-PSSO-G2 17 R-PSSO-G3 9 R-XBCC-N3 6 R-XDSO-C8 13 R-XDSO-F14 9 R-XDSO-N3 21 R-XUUC-N3 18 R-XUUC-N5 8 S-MSFM-P3 6 S-PDSO-G8 9 S-PDSO-N5 8 S-XUUC-N2 15 S-XUUC-N3 10 X-XUUC-N 46

3,282 hits Apply

e0 1,180 e1 8 e3 104 e4 8

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Manufacturer (34)

Advanced Linear Devices Inc 21 Advanced Semiconductor Inc 14 American Power Devices Inc 5 Analog Devices Inc 16 Calogic Inc 159 Central Semiconductor Corp 279 Diodes Incorporated 82 Fairchild Semiconductor Corporation 4 General Transistor Corp 1 Hi-Tron Semiconductor Corp 8 Infineon Technologies AG 11 InterFET Corporation 13 International Rectifier 154 Linear Integrated Systems 222 Microsemi Corporation 105 Monolithic Power Systems 3 Motorola Mobility LLC 8 NEC Electronics Group 4 NXP Semiconductors 7 onsemi 99 Panasonic Electronic Components 1 Renesas Electronics Corporation 69 Rochester Electronics LLC 153 Sensitron Semiconductors 8 Solid State Devices Inc (SSDI) 2 Solitron Devices Inc 1,412 SUMITOMO ELECTRIC Device Innovations Inc 2 Supertex Inc 95 Swampscott Electronics Co Inc 2 Texas Instruments 49 Toshiba America Electronic Components 121 TT Electronics Power and Hybrid / Semelab Limited 76 Vishay Intertechnologies 10 Vishay Siliconix 67

3,282 hits Apply

1 148 2 2 3 7 NOT APPLICABLE 5 NOT SPECIFIED 100

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Number of Elements (5)

1 2,559 2 525 3 17 4 64 8 1

Min - Max

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Number of Terminals (15)

14 48 15 8 16 11 18 9 2 916 20 7 24 1 28 2 3 1,292 4 185 5 23 6 351 7 16 8 294 9 1

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DEPLETION MODE 2,176 DUAL GATE, ENHANCEMENT MODE 2 ENHANCEMENT MODE 1,003

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70.0 °C 18 80.0 °C 1 85.0 °C 10 125.0 °C 101 135.0 °C 81 150.0 °C 1,042 175.0 °C 89 200.0 °C 399

Min (°C) - Max (°C)

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-65.0 °C 47 -55.0 °C 69 0.0 °C 8

Min (°C) - Max (°C)

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CERAMIC, GLASS-SEALED 3 CERAMIC, METAL-SEALED COFIRED 91 METAL 728 PLASTIC/EPOXY 1,231 UNSPECIFIED 188

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RECTANGULAR 1,000 ROUND 1,128 SQUARE 60 UNSPECIFIED 53

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CHIP CARRIER 32 CYLINDRICAL 1,128 DIE 951 DISK BUTTON 2 FLANGE MOUNT 36 GRID ARRAY 9 IN-LINE 163 SMALL OUTLINE 765 UNCASED CHIP 108

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Active 2,185 Contact Manufacturer 128 End Of Life 44 Lifetime Buy 6 Not Recommended 9 Obsolete 639 Transferred 271

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No 3,282

3,282 hits Apply

225 2 235 78 240 74 245 4 255 1 260 85 NOT APPLICABLE 5 NOT SPECIFIED 1,988

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Polarity/Channel Type (4)

N-CHANNEL 2,372 N-CHANNEL AND P-CHANNEL 45 NPN 3 P-CHANNEL 798

3,282 hits Apply

100 mW 3 150 mW 1 200 mW 5 300 mW 1 315 mW 3 325 mW 3 340 mW 5 350 mW 4 360 mW 14 500 mW 3 540 mW 3 625 mW 6 890 mW 1 950 mW 6 962 mW 1 1 W 4 1.3 W 5 1.4 W 1 1.5 W 10 2 W 4 2.5 W 4 3 W 1 5 W 11 6.25 W 2 25 W 1

Min (W) - Max (W)

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25 mW 2 60 mW 2 100 mW 16 125 mW 4 150 mW 16 200 mW 49 225 mW 13 250 mW 58 280 mW 3 300 mW 213 310 mW 46 315 mW 3 325 mW 11 350 mW 71 360 mW 116 375 mW 4 400 mW 55 500 mW 136 540 mW 5 570 mW 6 600 mW 13 625 mW 10 700 mW 5 750 mW 3 800 mW 8 830 mW 3 900 mW 13 950 mW 5 960 mW 3 1 W 25 1.1 W 5 1.25 W 8 1.35 W 7 1.4 W 8 1.5 W 9 1.8 W 45 2 W 22 2.1 W 7 2.13 W 3 2.2 W 3 2.5 W 14 3 W 14 3.1 W 7 3.9 W 3 5 W 13 6 W 3 6.25 W 5 8.3 W 3 20 W 5 25 W 16

Min (W) - Max (W)

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1 A 1 1.44 A 1 3.2 A 2 3.66 A 2 7.9 A 1 8 A 1 12 A 6 15.6 A 1 16 A 1 17 A 1 25 A 1 33 A 1 88 A 1

Min (A) - Max (A)

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Surface Mount (2)

NO 1,392 YES 923

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Transition Frequency-Nom (fT) (1)

250 MHz 3

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