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31 - 40 of 3,286 results
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SD5401CY
Calogic Inc
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Check for Price | No | No | Active | N-CHANNEL | YES | COMMON GATE, 4 ELEMENTS WITH BUILT-IN DIODE | 14 | 10 V | 4 | 50 mA | 70 Ω | LOW INSERTION LOSS | 0.5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 500 mW | SWITCHING | SILICON | R-PDSO-G14 | Not Qualified | 85 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | CALOGIC LLC | SOT | SOIC-14 | 14 | compliant | EAR99 | 8541.21.00.95 | ||||
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SD5000N
Calogic Inc
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Check for Price | No | No | Active | N-CHANNEL | NO | COMMON GATE, 4 ELEMENTS WITH BUILT-IN DIODE | 16 | 20 V | 4 | 50 mA | 70 Ω | LOW INSERTION LOSS | 0.5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 500 mW | SWITCHING | SILICON | R-PDIP-T16 | Not Qualified | 85 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | DUAL | CALOGIC LLC | DIP | PLASTIC, DIP-16 | 16 | compliant | EAR99 | 8541.21.00.95 | ||||
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2SK2145
Toshiba America Electronic Components
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Check for Price | No | Yes | Active | N-CHANNEL | YES | COMMON SOURCE, 2 ELEMENTS | 5 | 2 | LOW NOISE | JUNCTION | DEPLETION MODE | 300 mW | AMPLIFIER | SILICON | R-PDSO-G5 | Not Qualified | 125 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | TOSHIBA CORP | 2-3L1C, SMV, 5 PIN | 5 | unknown | EAR99 | Toshiba | |||||||||
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ALD114913PA
Advanced Linear Devices Inc
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Check for Price | No | Contact Manufacturer | N-CHANNEL | NO | COMMON SOURCE, 2 ELEMENTS | 8 | 10.6 V | 2 | 0.1 pF | METAL-OXIDE SEMICONDUCTOR | DEPLETION MODE | 500 mW | SWITCHING | SILICON | R-PDIP-T8 | 70 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | DUAL | ADVANCED LINEAR DEVICES INC | IN-LINE, R-PDIP-T8 | unknown | EAR99 | ||||||||||||||
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ALD114935PA
Advanced Linear Devices Inc
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Check for Price | No | Contact Manufacturer | N-CHANNEL | NO | COMMON SOURCE, 2 ELEMENTS | 8 | 10 V | 2 | 12 mA | 0.1 pF | METAL-OXIDE SEMICONDUCTOR | DEPLETION MODE | 500 mW | SWITCHING | SILICON | R-PDIP-T8 | 70 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | DUAL | ADVANCED LINEAR DEVICES INC | IN-LINE, R-PDIP-T8 | unknown | EAR99 | |||||||||||||
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ALD114935SA
Advanced Linear Devices Inc
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Check for Price | No | Contact Manufacturer | N-CHANNEL | YES | COMMON SOURCE, 2 ELEMENTS | 8 | 10 V | 2 | 12 mA | 0.1 pF | METAL-OXIDE SEMICONDUCTOR | DEPLETION MODE | 500 mW | SWITCHING | SILICON | R-PDSO-G8 | 70 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | ADVANCED LINEAR DEVICES INC | SMALL OUTLINE, R-PDSO-G8 | unknown | EAR99 | |||||||||||||
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ALD114913SA
Advanced Linear Devices Inc
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Check for Price | No | Contact Manufacturer | N-CHANNEL | YES | COMMON SOURCE, 2 ELEMENTS | 8 | 10.6 V | 2 | 0.1 pF | METAL-OXIDE SEMICONDUCTOR | DEPLETION MODE | 500 mW | SWITCHING | SILICON | R-PDSO-G8 | 70 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | ADVANCED LINEAR DEVICES INC | SMALL OUTLINE, R-PDSO-G8 | unknown | EAR99 | ||||||||||||||
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3N165
Calogic Inc
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Check for Price | No | No | Active | P-CHANNEL | NO | COMMON SOURCE, 2 ELEMENTS | 6 | 40 V | 2 | 50 mA | 300 Ω | VERY HIGH INPUT IMPEDANCE | 0.7 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | AMPLIFIER | SILICON | TO-99 | O-MBCY-W6 | Not Qualified | 200 °C | NOT SPECIFIED | NOT SPECIFIED | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | CALOGIC LLC | TO-99 | HERMETIC SEALED PACKAGE-6 | 6 | compliant | EAR99 | 8541.21.00.95 | |||
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CSD75204W15
Texas Instruments
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Check for Price | No | Yes | Obsolete | P-CHANNEL | YES | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | 9 | 2 | 3 A | 55 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 700 mW | SWITCHING | SILICON | S-XBGA-B9 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | UNSPECIFIED | SQUARE | GRID ARRAY | BALL | BOTTOM | TEXAS INSTRUMENTS INC | 1.50 X 1.50 MM, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-9 | 9 | unknown | EAR99 | Texas Instruments | ||||||||
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CSD75205W1015
Texas Instruments
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$0.5902 | No | Yes | Obsolete | P-CHANNEL | YES | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | 6 | 20 V | 2 | 1.2 A | 180 mΩ | 33 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 750 mW | SWITCHING | SILICON | R-XBGA-B6 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | UNSPECIFIED | RECTANGULAR | GRID ARRAY | BALL | BOTTOM | TEXAS INSTRUMENTS INC | GRID ARRAY, R-XBGA-B6 | 6 | unknown | EAR99 | Texas Instruments |