Parametric results for: MMBF170 under Power Field-Effect Transistors
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MMBF170
Diodes Incorporated
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Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE | 1 | 500 mA | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | e0 | 150 °C | Tin/Lead (Sn/Pb) | DIODES INC | unknown | EAR99 | ||||||||||||||||||||||||||||
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MMBF170
Fairchild Semiconductor Corporation
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$0.0518 | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 500 mA | 5 Ω | 10 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | FAIRCHILD SEMICONDUCTOR CORP | compliant | EAR99 | SOT-23 | TO-236AB, 3 PIN | 3 | 3LD, SOT23, JEDEC TO-236, LOW PROFILE | ||||||
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MMBF170
National Semiconductor Corporation
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Check for Price | No | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 500 mA | 5 Ω | 10 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e0 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin/Lead (Sn/Pb) | GULL WING | DUAL | NATIONAL SEMICONDUCTOR CORP | compliant | ||||||||||||||
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MMBF170
Texas Instruments
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Check for Price | No | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 500 mA | 5 Ω | 10 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e0 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin/Lead (Sn/Pb) | GULL WING | DUAL | NATIONAL SEMICONDUCTOR CORP | unknown | EAR99 | SMALL OUTLINE, R-PDSO-G3 | ||||||||||||
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MMBF170W-7-F
Diodes Incorporated
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 500 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIODES INC | unknown | EAR99 | SMALL OUTLINE, R-PDSO-G3 | 3 | ||||||||||||
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MMBF170D87Z
Texas Instruments
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Check for Price | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 500 mA | 5 Ω | 10 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | NATIONAL SEMICONDUCTOR CORP | unknown | EAR99 | SMALL OUTLINE, R-PDSO-G3 | |||||||||||||||
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MMBF170LT3G
Rochester Electronics LLC
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Check for Price | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 500 mA | 5 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | COMMERCIAL | NOT SPECIFIED | 260 | 40 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | ROCHESTER ELECTRONICS LLC | unknown | SOT-23 | ROHS COMPLIANT, TO-236, CASE 318-08, 3 PIN | 3 | CASE 318-08 | ||||||||||
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MMBF170
Motorola Semiconductor Products
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Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 500 mA | 5 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 550 mW | SWITCHING | SILICON | TO-236AA | R-PDSO-G3 | e0 | Not Qualified | 125 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | DUAL | MOTOROLA INC | unknown | EAR99 | 8541.21.00.95 | ||||||||||||||
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MMBF170LT3G
onsemi
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$0.0806 | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 500 mA | 5 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 225 mW | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | ON SEMICONDUCTOR | compliant | EAR99 | SOT-23 (TO-236) 3 LEAD | TO-236, 3 PIN | 3 | 318 | onsemi | ||||||
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MMBF170LT3
Motorola Semiconductor Products
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Check for Price | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 500 mA | 5 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 225 mW | SILICON | TO-236AB | R-PDSO-G3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | MOTOROLA INC | unknown | EAR99 | 8541.21.00.95 |