Parametric results for: 05nmb under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 10

24 hits Apply

DS Breakdown Voltage-Min (2)

600 V 6 700 V 4

Min (V) - Max (V)

24 hits Apply

Drain Current-Max (ID) (1)

500 mA 10

24 hits Apply

Drain-source On Resistance-Max (2)

13.2 Ω 6 14.4 Ω 4

Min (Ω) - Max (Ω)

24 hits Apply

METAL-OXIDE SEMICONDUCTOR 10

24 hits Apply

4 pF 6 5 pF 4

Min (pF) - Max (pF)

24 hits Apply

TO-92 8

24 hits Apply

O-PBCY-T3 8 R-PDSO-G4 1 R-PSSO-F3 1

24 hits Apply

Manufacturer (2)

STMicroelectronics 1 Unisonic Technologies Co Ltd 23

24 hits Apply

Number of Elements (1)

1 10

24 hits Apply

Number of Terminals (2)

3 9 4 1

24 hits Apply

ENHANCEMENT MODE 10

24 hits Apply

150.0 °C 10

24 hits Apply

PLASTIC/EPOXY 10

24 hits Apply

RECTANGULAR 2 ROUND 8

24 hits Apply

CYLINDRICAL 8 SMALL OUTLINE 2

24 hits Apply

Active 24

24 hits Apply

NOT SPECIFIED 24

24 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 10

24 hits Apply

1.4 W 8 3.3 W 1 9 W 1

Min (W) - Max (W)

24 hits Apply

Surface Mount (2)

NO 8 YES 2

24 hits Apply