Parametric results for: 128M NAND FLASH MEMORY under Thin Film Resistors

All Filters Additional Feature Construction JESD-609 Code Manufacturer Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Height Package Length Package Style Package Width Packing Method Part Life Cycle Code Rated Power Dissipation (P) Reference Standard Resistance Resistor Type Rohs Code Size Code Technology Temperature Coefficient Tolerance

ANTI-SULFUR 3

3 hits Apply

Chip 3

3 hits Apply

e2 1 e4 1

3 hits Apply

Manufacturer (1)

Vishay Intertechnologies 3

3 hits Apply

2 3

3 hits Apply

155.0 °C 3

3 hits Apply

-55.0 °C 3

3 hits Apply

500 µm 3

3 hits Apply

6.3 mm 3

3 hits Apply

Package Style (1)

SMT 3

3 hits Apply

3.3 mm 3

3 hits Apply

Tape, Plastic 2 Waffle Pack 1

3 hits Apply

Active 3

3 hits Apply

Rated Power Dissipation (P) (1)

2 W 3

3 hits Apply

MIL-PRF-55342G 3

3 hits Apply

Resistance (2)

127 MΩ 2 130 MΩ 1

Min (Ω) - Max (Ω)

3 hits Apply

Resistor Type (1)

FIXED RESISTOR 3

3 hits Apply

No 1 Yes 2

3 hits Apply

Size Code (1)

2513 3

3 hits Apply

Technology (1)

THIN FILM 3

3 hits Apply

Temperature Coefficient (1)

100 ppm/°C 3

3 hits Apply

Tolerance (3)

0.25 % 1 0.5 % 1 1.0 % 1

Min (%) - Max (%)

3 hits Apply