Parametric results for: 128mb direct rambus dram ... under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

BLOCK ORIENTED PROTOCOL 1,247

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Access Time-Max (15)

1.25 ns 15 1.28 ns 3 1.5 ns 11 1.56 ns 3 1.6 ns 4 2.06 ns 11 2.1 ns 4 2.11 ns 3 32 ns 60 35 ns 20 40 ns 121 45 ns 244 50 ns 17 53 ns 95 53.3 ns 42

Min (ns) - Max (ns)

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IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT 39 SELF CONTAINED REFRESH 759 SELF CONTAINED REFRESH; MASKED WRITE; RAMBUS SIGNALING LOGIC INTERFACE; PRIMARY RMODULE 96 SELF CONTAINED REFRESH; MASKED WRITE; RAMBUS SIGNALING LOGIC INTERFACE; SECONDARY RMODULE 96 SELF CONTAINED REFRESH; WD-MAX 18 SELF REFRESH 68

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Clock Frequency-Max (fCLK) (9)

300 MHz 6 356 MHz 12 400 MHz 14 533 MHz 2 600 MHz 211 711 MHz 119 800 MHz 390 1.066 GHz 91 1.2 GHz 6

Min (MHz) - Max (MHz)

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COMMON 866

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R-PDMA-N184 208 R-PDMA-N232 8 R-XDMA-N160 53 R-XDMA-N184 894 R-XDMA-N232 95 R-XSMA-N36 192 R-XXMA-X200 18

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e4 15

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133.35 mm 42

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Manufacturer (13)

Elpida Memory Inc 108 Infineon Technologies AG 90 Kingston Technology Company 2 LG Semicon Co Ltd 60 Micron Technology Inc 120 Mitsubishi Electric 6 NEC Electronics America Inc 18 NEC Electronics Group 19 Rambus Inc 212 Renesas Electronics Corporation 45 Samsung Semiconductor 538 SK Hynix Inc 199 Toshiba America Electronic Components 51

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Memory Density (27)

8.3886 Mbit 6 9.4372 Mbit 6 16.7772 Mbit 12 18.8744 Mbit 12 33.5544 Mbit 12 37.7487 Mbit 12 67.1089 Mbit 18 75.4975 Mbit 18 134.2177 Mbit 33 150.9949 Mbit 33 268.4355 Mbit 28 301.9899 Mbit 37 536.8709 Mbit 142 603.9798 Mbit 144 805.3064 Mbit 62 905.9697 Mbit 54 1.0737 Gbit 173 1.208 Gbit 181 1.6106 Gbit 38 1.8119 Gbit 31 2.1475 Gbit 132 2.4159 Gbit 135 3.2212 Gbit 7 3.6239 Gbit 9 4.295 Gbit 56 4.8318 Gbit 66 9.6637 Gbit 10

Min (bit) - Max (bit)

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RAMBUS DRAM MODULE 1,468

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Memory Width (6)

8 96 9 96 16 575 18 611 32 48 36 41

Min - Max

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1 192 3 20

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1.0 1,252

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1 1,252

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160 53 184 888 200 18 232 103 36 192 84 214

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1.0486 M 12 2.0972 M 24 4.1943 M 36 8.3886 M 54 16.7772 M 77 33.5544 M 315 50.3316 M 116 67.1089 M 366 100.6633 M 69 134.2177 M 266 201.3266 M 16 268.4355 M 109 536.8709 M 7

Min (words) - Max (words)

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1000000.0 12 2000000.0 24 4000000.0 36 8000000.0 54 1.6E7 77 3.2E7 315 4.8E7 116 6.4E7 366 9.6E7 69 1.28E8 266 1.92E8 16 2.56E8 109 5.12E8 7

Min - Max

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SYNCHRONOUS 1,252

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70.0 °C 59

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0.0 °C 59

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Organization (46)

128MX16 110 128MX18 116 128MX32 16 128MX36 12 128MX8 6 128MX9 6 16MX16 16 16MX18 25 16MX8 18 16MX9 18 192MX16 7 192MX18 9 1MX8 6 1MX9 6 256MX16 40 256MX18 54 256MX36 3 256MX8 6 256MX9 6 2MX8 12 2MX9 12 32MX16 130 32MX18 132 32MX32 16 32MX36 13 32MX8 12 32MX9 12 48MX16 62 48MX18 54 4MX16 6 4MX18 6 4MX8 12 4MX9 12 512MX18 7 64MX16 151 64MX18 162 64MX32 16 64MX36 13 64MX8 12 64MX9 12 8MX16 15 8MX18 15 8MX8 12 8MX9 12 96MX16 38 96MX18 31

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3-STATE 1,058

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PLASTIC/EPOXY 228 UNSPECIFIED 1,240

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DIMM 944

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DIMM160,25 48 DIMM184 4 DIMM184,40 759 DIMM232,40 55

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RECTANGULAR 1,468

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MICROELECTRONIC ASSEMBLY 1,468

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Refresh Cycles (2)

16384 9 32768 6

Min - Max

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Supply Voltage-Nom (Vsup) (3)

2.5 V 1,125 3.3 V 64 5 V 64

Min (V) - Max (V)

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