Parametric results for: 12n60l under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

60.0 mJ 3 304.0 mJ 3 790.0 mJ 4

Min (mJ) - Max (mJ)

25 hits Apply

ISOLATED 7

25 hits Apply

Configuration (2)

SINGLE 3 SINGLE WITH BUILT-IN DIODE 10

25 hits Apply

DS Breakdown Voltage-Min (1)

600 V 10

25 hits Apply

Drain Current-Max (ID) (1)

12 A 13

25 hits Apply

Drain-source On Resistance-Max (3)

700 mΩ 3 800 mΩ 4 880 mΩ 3

Min (Ω) - Max (Ω)

25 hits Apply

METAL-OXIDE SEMICONDUCTOR 13

25 hits Apply

5 pF 3 115 pF 3

Min (pF) - Max (pF)

25 hits Apply

TO-220AB 9 TO-262AA 1

25 hits Apply

R-PSFM-T3 9 R-PSIP-T3 1

25 hits Apply

Manufacturer (2)

Alpha & Omega Semiconductor 2 Unisonic Technologies Co Ltd 23

25 hits Apply

Number of Elements (1)

1 13

25 hits Apply

Number of Terminals (1)

3 10

25 hits Apply

ENHANCEMENT MODE 11

25 hits Apply

150.0 °C 13

25 hits Apply

PLASTIC/EPOXY 10

25 hits Apply

RECTANGULAR 10

25 hits Apply

FLANGE MOUNT 9 IN-LINE 1

25 hits Apply

Active 17 Not Recommended 1 Obsolete 7

25 hits Apply

NOT SPECIFIED 11

25 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 13

25 hits Apply

36 W 2 50 W 1 51 W 3 54 W 2 150 W 1 156 W 1 225 W 2 278 W 1

Min (W) - Max (W)

25 hits Apply

Surface Mount (1)

NO 13

25 hits Apply