Parametric results for: 15NA50 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 3

3 hits Apply

850.0 mJ 3

3 hits Apply

ISOLATED 1

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

500 V 3

3 hits Apply

Drain Current-Max (ID) (2)

9.3 A 1 14.6 A 2

Min (A) - Max (A)

3 hits Apply

Drain-source On Resistance-Max (1)

400 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

140 pF 3

3 hits Apply

TO-218 2 TO-247 1

3 hits Apply

R-PSFM-T3 3

3 hits Apply

e0 3

3 hits Apply

Manufacturer (1)

STMicroelectronics 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLANGE MOUNT 3

3 hits Apply

Obsolete 3

3 hits Apply

No 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

80 W 1 190 W 2

Min (W) - Max (W)

3 hits Apply

80 W 1 190 W 2

Min (W) - Max (W)

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply