Parametric results for: 18N60P under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 10 BULK: 1000 1

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135.0 mJ 5 204.0 mJ 4 380.0 mJ 1 902.0 mJ 1 1000.0 mJ 11 1200.0 mJ 2

Min (mJ) - Max (mJ)

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DRAIN 17 ISOLATED 3

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Configuration (1)

SINGLE WITH BUILT-IN DIODE 25

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DS Breakdown Voltage-Min (1)

600 V 25

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Drain Current-Max (ID) (5)

9 A 1 12 A 2 13 A 5 18 A 16 99 A 1

Min (A) - Max (A)

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Drain-source On Resistance-Max (6)

23 mΩ 1 202 mΩ 4 280 mΩ 5 295 mΩ 2 400 mΩ 8 420 mΩ 5

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 25

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1.33 pF 1 4 pF 1 6 pF 2

Min (pF) - Max (pF)

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TO-220AB 7 TO-247 3 TO-247AC 1 TO-247AD 2 TO-263AB 3 TO-268AA 2

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R-PSFM-T3 15 R-PSIP-T3 3 R-PSSO-G2 7

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e1 2 e3 7

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Manufacturer (5)

IXYS Corporation 11 Littelfuse Inc 6 STMicroelectronics 18 Unisonic Technologies Co Ltd 7 Vishay Intertechnologies 5

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1 3

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Number of Elements (1)

1 25

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Number of Terminals (2)

2 7 3 18

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ENHANCEMENT MODE 25

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150.0 °C 22

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-55.0 °C 9

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PLASTIC/EPOXY 25

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RECTANGULAR 25

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FLANGE MOUNT 15 IN-LINE 3 SMALL OUTLINE 7

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Active 29 Not Recommended 1 Obsolete 11 Transferred 6

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Yes 8

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260 5 NOT SPECIFIED 26

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Polarity/Channel Type (1)

N-CHANNEL 25

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25 W 1 34 W 2 90 W 1 110 W 5 360 W 2 524 W 1

Min (W) - Max (W)

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Surface Mount (2)

NO 17 YES 8

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