Parametric results for: 18n4000 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

1000.0 mJ 6

10 hits Apply

ISOLATED 2

10 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

10 hits Apply

DS Breakdown Voltage-Min (1)

400 V 6

10 hits Apply

Drain Current-Max (ID) (1)

18 A 6

10 hits Apply

Drain-source On Resistance-Max (1)

200 mΩ 6

10 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

10 hits Apply

TO-220AB 4 TO-247 2

10 hits Apply

R-PSFM-T3 6

10 hits Apply

Manufacturer (2)

Taitron Components Inc 2 Unisonic Technologies Co Ltd 8

10 hits Apply

Number of Elements (1)

1 6

10 hits Apply

Number of Terminals (1)

3 6

10 hits Apply

ENHANCEMENT MODE 6

10 hits Apply

150.0 °C 6

10 hits Apply

PLASTIC/EPOXY 6

10 hits Apply

RECTANGULAR 6

10 hits Apply

FLANGE MOUNT 6

10 hits Apply

Active 10

10 hits Apply

NOT SPECIFIED 8

10 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

10 hits Apply

38.5 W 2 235 W 2 360 W 2

Min (W) - Max (W)

10 hits Apply

Surface Mount (1)

NO 6

10 hits Apply