Parametric results for: 1N4476 BK TIN/LEAD under Zener Diodes
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JANTXV1N4476US
Semtech Corporation
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$1.0000 | Transferred | 8.5 mA | 1.5 W | 30 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | YES | 1 | ZENER | 20 Ω | 5 % | Qualified | O-LELF-R2 | MIL-19500/406 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | SEMTECH CORP | HERMETIC SEALED PACKAGE-2 | 2 | unknown | EAR99 | 8541.10.00.50 | ||||||||||||||
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JAN1N4476
Microchip Technology Inc
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$6.3419 | No | Active | 8.5 mA | 1.5 W | 30 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | HIGH RELIABILITY, METALLURGICALLY BONDED | 5 % | Qualified | O-LALF-W2 | e0 | MIL-19500 | DO-41 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | ||||||||||||
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1N4476
Microchip Technology Inc
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$7.1088 | No | Active | 8.5 mA | 1.5 W | 30 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | O-LALF-W2 | e0 | DO-41 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | Microchip | |||||||||||||
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JANTX1N4476
Microchip Technology Inc
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$7.3288 | No | Active | 8.5 mA | 1.5 W | 30 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | HIGH RELIABILITY, METALLURGICALLY BONDED | 5 % | Qualified | O-LALF-W2 | e0 | MIL-19500 | DO-41 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | Microchip | |||||||||||
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JANTX1N4476/TR
Microchip Technology Inc
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$7.4081 | No | Active | 8.5 mA | 50 nA | 1.5 W | 30 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | HIGH RELIABILITY | 20 Ω | 750 Ω | 24 V | 5 % | O-LALF-W2 | e0 | MIL-PRF-19500; MIL-STD-750 | DO-41 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | unknown | Microchip | |||||||||
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1N4476
Microsemi Corporation
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$8.1585 | No | Transferred | 8.5 mA | 1.5 W | 30 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | O-LALF-W2 | e0 | DO-41 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | HERMETIC SEALED, GLASS PACKAGE-2 | not_compliant | ||||||||||||||
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1N4476US
Microsemi Corporation
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$9.5183 | No | No | Transferred | 8.5 mA | 1.5 W | 30 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | YES | 1 | ZENER | METALLURGICALLY BONDED | 5 % | O-LELF-R2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS PACKAGE-2 | unknown | EAR99 | 8541.10.00.50 | ||||||||||||||
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JAN1N4476
Microsemi Corporation
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$9.9705 | No | No | Transferred | 8.5 mA | 1.5 W | 30 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | HIGH RELIABILITY, METALLURGICALLY BONDED | 5 % | Not Qualified | O-LALF-W2 | e0 | MIL-19500 | DO-41 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | HERMETIC SEALED, GLASS PACKAGE-2 | 2 | unknown | EAR99 | 8541.10.00.50 | DO-41 | |||||||
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JAN1N4476US
Microchip Technology Inc
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$11.1396 | No | Active | 8.5 mA | 1.5 W | 30 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | YES | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Qualified | O-LELF-R2 | e0 | MIL-19500 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | |||||||||||||||
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1N4476US
Microchip Technology Inc
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$11.8052 | No | Active | 8.5 mA | 1.5 W | 30 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | YES | 1 | ZENER | METALLURGICALLY BONDED | 5 % | O-LELF-R2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant |